scholarly journals Electron-hole asymmetry and band gaps of commensurate double moire patterns in twisted bilayer graphene on hexagonal boron nitride

2021 ◽  
Vol 103 (7) ◽  
Author(s):  
Jiseon Shin ◽  
Youngju Park ◽  
Bheema Lingam Chittari ◽  
Jin-Hua Sun ◽  
Jeil Jung
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Band Gaps ◽  
Electron Hole ◽  
Moire Patterns ◽  
Twisted Bilayer Graphene ◽  
Moiré Patterns

scholarly journals Evidence of Orbital Ferromagnetism in Twisted Bilayer Graphene Aligned to Hexagonal Boron Nitride

Nano Letters ◽  
2021 ◽  
Author(s):  
Aaron L. Sharpe ◽  
Eli J. Fox ◽  
Arthur W. Barnard ◽  
Joe Finney ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Twisted Bilayer Graphene

scholarly journals Band structure of twisted bilayer graphene on hexagonal boron nitride

2020 ◽  
Vol 102 (15) ◽  
Author(s):  
Tommaso Cea ◽  
Pierre A. Pantaleón ◽  
Francisco Guinea
Keyword(s):  
Boron Nitride ◽  
Band Structure ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Twisted Bilayer Graphene

scholarly journals Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Vladimir V. Korolkov ◽  
YongJin Cho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Strain Relaxation ◽  
Topological Defects ◽  
Graphene Layers ◽  
Moire Patterns ◽  
Highly Strained ◽  
Moiré Patterns

Abstract Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene.

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