scholarly journals Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices

2018 ◽  
Vol 98 (11) ◽  
Author(s):  
B. Kuerbanjiang ◽  
Y. Fujita ◽  
M. Yamada ◽  
S. Yamada ◽  
A. M. Sanchez ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Valve ◽  
Semiconductor Interface ◽  
Interface Quality

Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors

2021 ◽  
Vol 129 (18) ◽  
pp. 183901
Author(s):  
M. Yamada ◽  
Y. Shiratsuchi ◽  
H. Kambe ◽  
K. Kudo ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Transport ◽  
Temperature Dependent ◽  
Semiconductor Interface

scholarly journals Spin transport in a lateral spin valve with a suspended Cu channel

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Kenjiro Matsuki ◽  
Ryo Ohshima ◽  
Livio Leiva ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Valve

Spin Transport in $\hbox{Co/Al}_{2}\hbox{O}_{3}/\hbox{Alq}_{3}/\hbox{Co}$ Organic Spin Valve

2011 ◽  
Vol 47 (10) ◽  
pp. 2649-2651 ◽  
Author(s):  
Xianmin Zhang ◽  
Shigemi Mizukami ◽  
Takahide Kubota ◽  
Mikihiko Oogane ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Valve

scholarly journals Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
L. Nádvorník ◽  
P. Němec ◽  
T. Janda ◽  
K. Olejník ◽  
V. Novák ◽  
...  
Keyword(s):  
Long Range ◽  
High Speed ◽  
Spin Transport ◽  
Semiconductor Interface ◽  
Electronic Spin

Room-temperature spin transport in InAs nanowire lateral spin valve

RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75736-75740 ◽  
Author(s):  
Zhicheng Wang ◽  
Dong Pan ◽  
Le Wang ◽  
Tingwen Wang ◽  
Bing Zhao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spintronic Devices ◽  
Spin Diffusion Length ◽  
Nanowire Device ◽  
Large Spin

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

Effect of the CoZr/Cu interface quality on the magnetoresistance behavior in a spin-valve sandwich (CoZr/Cu/Co)

2001 ◽  
Vol 223 (1) ◽  
pp. 81-87 ◽  
Author(s):  
M. El Harfaoui ◽  
M. Faris ◽  
A. Qachaou ◽  
J. Ben Youssef ◽  
H. Le Gall ◽  
...  
Keyword(s):  
Spin Valve ◽  
Interface Quality

Temperature Dependence of Nonlocal Spin Transport in Si Lateral Spin-Valve Devices

2018 ◽  
Author(s):  
M. Ishikawa ◽  
M. Tsukahara ◽  
M. Yamada ◽  
Y. Fujita ◽  
K. Hamaya
Keyword(s):  
Temperature Dependence ◽  
Spin Transport ◽  
Spin Valve

scholarly journals Correlating spin transport and electrode magnetization in a graphene spin valve: Simultaneous magnetic microscopy and non-local measurements

2015 ◽  
Vol 107 (14) ◽  
pp. 142406 ◽  
Author(s):  
Andrew J. Berger ◽  
Michael R. Page ◽  
Hua Wen ◽  
Kathleen M. McCreary ◽  
Vidya P. Bhallamudi ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Valve ◽  
Local Measurements ◽  
Non Local ◽  
Magnetic Microscopy

Spin transport in nanoscale Si-based spin-valve devices

2016 ◽  
Vol 109 (23) ◽  
pp. 232402 ◽  
Author(s):  
Duong Dinh Hiep ◽  
Masaaki Tanaka ◽  
Pham Nam Hai
Keyword(s):  
Spin Transport ◽  
Spin Valve
Sign in / Sign up

Export Citation Format

Share Document