Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors

2021 ◽  
Vol 129 (18) ◽  
pp. 183901
Author(s):  
M. Yamada ◽  
Y. Shiratsuchi ◽  
H. Kambe ◽  
K. Kudo ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Transport ◽  
Temperature Dependent ◽  
Semiconductor Interface

scholarly journals Temperature-Dependent Spin Transport and Current-Induced Torques in Superconductor-Ferromagnet Heterostructures

2021 ◽  
Vol 126 (8) ◽  
Author(s):  
M. Müller ◽  
L. Liensberger ◽  
L. Flacke ◽  
H. Huebl ◽  
A. Kamra ◽  
...  
Keyword(s):  
Spin Transport ◽  
Temperature Dependent

Symmetry-state features in a global analysis of the temperature-dependent spin transport in Fe/MgO/Fe junctions

2018 ◽  
Vol 98 (14) ◽  
Author(s):  
C. Bellouard ◽  
Y. Lu ◽  
A. Duluard ◽  
B. Negulescu ◽  
C. Senet ◽  
...  
Keyword(s):  
Spin Transport ◽  
Global Analysis ◽  
Temperature Dependent

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

scholarly journals Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices

2018 ◽  
Vol 98 (11) ◽  
Author(s):  
B. Kuerbanjiang ◽  
Y. Fujita ◽  
M. Yamada ◽  
S. Yamada ◽  
A. M. Sanchez ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Valve ◽  
Semiconductor Interface ◽  
Interface Quality

scholarly journals Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
L. Nádvorník ◽  
P. Němec ◽  
T. Janda ◽  
K. Olejník ◽  
V. Novák ◽  
...  
Keyword(s):  
Long Range ◽  
High Speed ◽  
Spin Transport ◽  
Semiconductor Interface ◽  
Electronic Spin

scholarly journals Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
P. Pipinys ◽  
V. Lapeika
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Model Temperature

Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.

First principle study of temperature-dependent spin transport in VSe2 monolayer

2020 ◽  
Vol 504 ◽  
pp. 144411 ◽  
Author(s):  
Nivedita Pandey ◽  
Abhishek Kumar ◽  
Subhananda Chakrabarti
Keyword(s):  
Spin Transport ◽  
First Principle ◽  
Temperature Dependent

Temperature dependent spin transport investigations in single layer VTe2

2019 ◽  
Vol 770 ◽  
pp. 345-349 ◽  
Author(s):  
Vinayak Musle ◽  
Abhishek Kumar ◽  
Sudhanshu Choudhary
Keyword(s):  
Spin Transport ◽  
Single Layer ◽  
Temperature Dependent

scholarly journals Temperature dependent spin transport properties of platinum inferred from spin Hall magnetoresistance measurements

2014 ◽  
Vol 104 (24) ◽  
pp. 242411 ◽  
Author(s):  
Sibylle Meyer ◽  
Matthias Althammer ◽  
Stephan Geprägs ◽  
Matthias Opel ◽  
Rudolf Gross ◽  
...  
Keyword(s):  
Transport Properties ◽  
Spin Transport ◽  
Temperature Dependent
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