Spin transport in nanoscale Si-based spin-valve devices

2016 ◽  
Vol 109 (23) ◽  
pp. 232402 ◽  
Author(s):  
Duong Dinh Hiep ◽  
Masaaki Tanaka ◽  
Pham Nam Hai
Keyword(s):  
2018 ◽  
Vol 98 (11) ◽  
Author(s):  
B. Kuerbanjiang ◽  
Y. Fujita ◽  
M. Yamada ◽  
S. Yamada ◽  
A. M. Sanchez ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Kenjiro Matsuki ◽  
Ryo Ohshima ◽  
Livio Leiva ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
...  
Keyword(s):  

2011 ◽  
Vol 47 (10) ◽  
pp. 2649-2651 ◽  
Author(s):  
Xianmin Zhang ◽  
Shigemi Mizukami ◽  
Takahide Kubota ◽  
Mikihiko Oogane ◽  
Hiroshi Naganuma ◽  
...  
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RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75736-75740 ◽  
Author(s):  
Zhicheng Wang ◽  
Dong Pan ◽  
Le Wang ◽  
Tingwen Wang ◽  
Bing Zhao ◽  
...  

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.


2018 ◽  
Author(s):  
M. Ishikawa ◽  
M. Tsukahara ◽  
M. Yamada ◽  
Y. Fujita ◽  
K. Hamaya

2015 ◽  
Vol 107 (14) ◽  
pp. 142406 ◽  
Author(s):  
Andrew J. Berger ◽  
Michael R. Page ◽  
Hua Wen ◽  
Kathleen M. McCreary ◽  
Vidya P. Bhallamudi ◽  
...  

2020 ◽  
Vol 13 (2) ◽  
pp. 023001
Author(s):  
Takahiro Shiihara ◽  
Michihiro Yamada ◽  
Mizuki Honda ◽  
Atsuya Yamada ◽  
Shinya Yamada ◽  
...  
Keyword(s):  

1999 ◽  
Vol 23 (1_2) ◽  
pp. 49-51 ◽  
Author(s):  
H. Kikuchi ◽  
K. Kobayashi ◽  
M. Sato

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