Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
N. A. Viglin ◽  
V. V. Ustinov ◽  
S. O. Demokritov ◽  
A. O. Shorikov ◽  
N. G. Bebenin ◽  
...  
Keyword(s):  
Spin Transport ◽  
Magnetic Control ◽  
Electric Measurement ◽  
Spin Devices

scholarly journals Organic spintronics

2011 ◽  
Vol 369 (1948) ◽  
pp. 3054-3068 ◽  
Author(s):  
I. Bergenti ◽  
V. Dediu ◽  
M. Prezioso ◽  
A. Riminucci
Keyword(s):  
Organic Semiconductors ◽  
Spin Transport ◽  
Tunnel Barrier ◽  
Organic Spintronics ◽  
Open Questions ◽  
Spin Polarized ◽  
Basic Concepts ◽  
Functional Operation ◽  
Spin Devices

Organic semiconductors are emerging materials in the field of spintronics. Successful achievements include their use as a tunnel barrier in magnetoresistive tunnelling devices and as a medium for spin-polarized current in transport devices. In this paper, we give an overview of the basic concepts of spin transport in organic semiconductors and present the results obtained in the field, highlighting the open questions that have to be addressed in order to improve devices performance and reproducibility. The most challenging perspectives will be discussed and a possible evolution of organic spin devices featuring multi-functional operation is presented.

scholarly journals Magnetic control of polariton spin transport

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
D. Caputo ◽  
E. S. Sedov ◽  
D. Ballarini ◽  
M. M. Glazov ◽  
A. V. Kavokin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Spin Transport ◽  
Beat Frequency ◽  
Magnetic Control ◽  
Polarization Pattern ◽  
Spin Degree ◽  
Full Control ◽  
Planar Microcavity ◽  
The Magnetic Field ◽  
Photon Coupling

AbstractPolaritons are hybrid light–matter quasiparticles arising from the strong coupling of excitons and photons. Owing to the spin degree-of-freedom, polaritons form spinor fluids able to propagate in the cavity plane over long distances with promising properties for spintronics applications. Here we demonstrate experimentally the full control of the polarization dynamics of a propagating exciton–polariton condensate in a planar microcavity by using a magnetic field applied in the Voigt geometry. We show the change of the spin-beat frequency, the suppression of the optical spin Hall effect, and the rotation of the polarization pattern by the magnetic field. The observed effects are theoretically reproduced by a phenomenological model based on microscopic consideration of exciton–photon coupling in a microcavity accounting for the magneto-induced mixing of exciton–polariton and dark, spin-forbidden exciton states.

scholarly journals Investigation of the thermal tolerance of silicon-based lateral spin valves

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

scholarly journals Improved Thermal Tolerance of Silicon-based Lateral Spin Valves

2020 ◽  
Author(s):  
Naoto Yamashita ◽  
Soobeom Lee ◽  
Ryo Ohshima ◽  
Ei Shigematsu ◽  
Hayato Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300°C, resulting in the formation of a Au/Si interface. The Au-Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 mm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400°C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration

2015 ◽  
Vol 117 (17) ◽  
pp. 17D919 ◽  
Author(s):  
Yota Takamura ◽  
Taiju Akushichi ◽  
Yusuke Shuto ◽  
Satoshi Sugahara
Keyword(s):  
Electric Field ◽  
Spin Transport ◽  
Analysis And Design ◽  
Spin Devices

Spin transport in organics and organic spin devices

2005 ◽  
Vol 152 (4) ◽  
pp. 334 ◽  
Author(s):  
Z.G. Yu ◽  
M.A. Berding ◽  
S. Krishnamurthy
Keyword(s):  
Spin Transport ◽  
Spin Devices
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