Spin transport in organics and organic spin devices

2005 ◽  
Vol 152 (4) ◽  
pp. 334 ◽  
Author(s):  
Z.G. Yu ◽  
M.A. Berding ◽  
S. Krishnamurthy
Keyword(s):  
Spin Transport ◽  
Spin Devices

scholarly journals Organic spintronics

2011 ◽  
Vol 369 (1948) ◽  
pp. 3054-3068 ◽  
Author(s):  
I. Bergenti ◽  
V. Dediu ◽  
M. Prezioso ◽  
A. Riminucci
Keyword(s):  
Organic Semiconductors ◽  
Spin Transport ◽  
Tunnel Barrier ◽  
Organic Spintronics ◽  
Open Questions ◽  
Spin Polarized ◽  
Basic Concepts ◽  
Functional Operation ◽  
Spin Devices

Organic semiconductors are emerging materials in the field of spintronics. Successful achievements include their use as a tunnel barrier in magnetoresistive tunnelling devices and as a medium for spin-polarized current in transport devices. In this paper, we give an overview of the basic concepts of spin transport in organic semiconductors and present the results obtained in the field, highlighting the open questions that have to be addressed in order to improve devices performance and reproducibility. The most challenging perspectives will be discussed and a possible evolution of organic spin devices featuring multi-functional operation is presented.

scholarly journals Investigation of the thermal tolerance of silicon-based lateral spin valves

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
N. A. Viglin ◽  
V. V. Ustinov ◽  
S. O. Demokritov ◽  
A. O. Shorikov ◽  
N. G. Bebenin ◽  
...  
Keyword(s):  
Spin Transport ◽  
Magnetic Control ◽  
Electric Measurement ◽  
Spin Devices

scholarly journals Improved Thermal Tolerance of Silicon-based Lateral Spin Valves

2020 ◽  
Author(s):  
Naoto Yamashita ◽  
Soobeom Lee ◽  
Ryo Ohshima ◽  
Ei Shigematsu ◽  
Hayato Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300°C, resulting in the formation of a Au/Si interface. The Au-Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 mm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400°C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration

2015 ◽  
Vol 117 (17) ◽  
pp. 17D919 ◽  
Author(s):  
Yota Takamura ◽  
Taiju Akushichi ◽  
Yusuke Shuto ◽  
Satoshi Sugahara
Keyword(s):  
Electric Field ◽  
Spin Transport ◽  
Analysis And Design ◽  
Spin Devices

scholarly journals Role of NiO in the nonlocal spin transport through thin NiO films on Y3Fe5O12

2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Geert R. Hoogeboom ◽  
Geert-Jan N. Sint Nicolaas ◽  
Andreas Alexander ◽  
Olga Kuschel ◽  
Joachim Wollschläger ◽  
...  
Keyword(s):  
Spin Transport ◽  
Nio Films

scholarly journals Temperature-Dependent Spin Transport and Current-Induced Torques in Superconductor-Ferromagnet Heterostructures

2021 ◽  
Vol 126 (8) ◽  
Author(s):  
M. Müller ◽  
L. Liensberger ◽  
L. Flacke ◽  
H. Huebl ◽  
A. Kamra ◽  
...  
Keyword(s):  
Spin Transport ◽  
Temperature Dependent
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