Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration

2015 ◽  
Vol 117 (17) ◽  
pp. 17D919 ◽  
Author(s):  
Yota Takamura ◽  
Taiju Akushichi ◽  
Yusuke Shuto ◽  
Satoshi Sugahara
Keyword(s):  
Electric Field ◽  
Spin Transport ◽  
Analysis And Design ◽  
Spin Devices

scholarly journals Organic spintronics

2011 ◽  
Vol 369 (1948) ◽  
pp. 3054-3068 ◽  
Author(s):  
I. Bergenti ◽  
V. Dediu ◽  
M. Prezioso ◽  
A. Riminucci
Keyword(s):  
Organic Semiconductors ◽  
Spin Transport ◽  
Tunnel Barrier ◽  
Organic Spintronics ◽  
Open Questions ◽  
Spin Polarized ◽  
Basic Concepts ◽  
Functional Operation ◽  
Spin Devices

Organic semiconductors are emerging materials in the field of spintronics. Successful achievements include their use as a tunnel barrier in magnetoresistive tunnelling devices and as a medium for spin-polarized current in transport devices. In this paper, we give an overview of the basic concepts of spin transport in organic semiconductors and present the results obtained in the field, highlighting the open questions that have to be addressed in order to improve devices performance and reproducibility. The most challenging perspectives will be discussed and a possible evolution of organic spin devices featuring multi-functional operation is presented.

Electric Field Effects on Spin Transport in Defective Metallic Carbon Nanotubes

Nano Letters ◽  
2007 ◽  
Vol 7 (11) ◽  
pp. 3518-3522 ◽  
Author(s):  
Young-Woo Son ◽  
Marvin L. Cohen ◽  
Steven G. Louie
Keyword(s):  
Carbon Nanotubes ◽  
Electric Field ◽  
Spin Transport ◽  
Electric Field Effects ◽  
Field Effects

Analysis and Design of Smart Electromagnetic Structures

2008 ◽  
Author(s):  
Prashanth Ramesh ◽  
Gregory Washington
Keyword(s):  
Dielectric Permittivity ◽  
Electric Field ◽  
Ambient Temperature ◽  
Ferroelectric Properties ◽  
Mechanical Strain ◽  
Ferroelectric Materials ◽  
Analysis And Design ◽  
Antenna Performance ◽  
Active Research ◽  
The Relationship

Use of ferroelectric materials to improve antenna performance is an area of active research. Applying an electric field across a ferroelectric used as the dielectric in an antenna enables tuning the antenna performance. Ferroelectrics also have coupled electromechanical behavior due to which it is sensitive to mechanical strains and fluctuations in ambient temperature. Use of ferroelectrics in antenna structures, especially those subject to mechanical and thermal loads, requires knowledge of the phenomenological relationship between the ferroelectric properties of interest (especially dielectric permittivity) and the external physical variables, viz. electric field(s), mechanical strains and temperature. To this end, a phenomenological model of ferroelectric materials based on the Devonshire thermodynamic theory is presented. This model is then used to obtain a relationship expressing the dependence of the dielectric permittivity on the mechanical strain, applied electric field and ambient temperature. The relationship is compared with published experimental data and other models in literature. Subsequently, a relationship expressing the dependence of antenna performance on those physical quantities is described.

Analysis and Design of a Micromachined Electric-Field Sensor

2008 ◽  
Vol 17 (1) ◽  
pp. 31-36 ◽  
Author(s):  
Behraad Bahreyni ◽  
Gayan Wijeweera ◽  
Cyrus Shafai ◽  
Athula Rajapakse
Keyword(s):  
Electric Field ◽  
Analysis And Design ◽  
Electric Field Sensor ◽  
Field Sensor

scholarly journals Investigation of the thermal tolerance of silicon-based lateral spin valves

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

Electric-field controlled spin transport in bilayer CrI3

2021 ◽  
Author(s):  
Damiano Marian ◽  
David Soriano ◽  
Enrique G. Marin ◽  
Giuseppe Iannaccone ◽  
Gianluca Fiori
Keyword(s):  
Electric Field ◽  
Spin Transport

Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
N. A. Viglin ◽  
V. V. Ustinov ◽  
S. O. Demokritov ◽  
A. O. Shorikov ◽  
N. G. Bebenin ◽  
...  
Keyword(s):  
Spin Transport ◽  
Magnetic Control ◽  
Electric Measurement ◽  
Spin Devices
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