Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/AlyGa1−yNcomposites

2017 ◽  
Vol 95 (15) ◽  
Author(s):  
M. Landmann ◽  
E. Rauls ◽  
W. G. Schmidt
Keyword(s):  
Composition Dependence ◽  
Semiconductor Heterostructures ◽  
Type I ◽  
Type Ii ◽  
Band Offsets ◽  
Band Alignments

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

2012 ◽  
Vol 100 (3) ◽  
pp. 033102 ◽  
Author(s):  
Yu. I. Mazur ◽  
V. G. Dorogan ◽  
G. J. Salamo ◽  
G. G. Tarasov ◽  
B. L. Liang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Type I ◽  
Type Ii ◽  
Band Alignments

Electronic Structure of Wide Bandgap Semiconductor Interfaces: Cubic SiC/AIN, SiC/BP, C/BN

1989 ◽  
Vol 162 ◽  
Author(s):  
W. R. L. Lambrecht ◽  
B. Segall
Keyword(s):  
Interface Energy ◽  
Wide Bandgap ◽  
Type I ◽  
Type Ii ◽  
Band Offsets ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Interfaces ◽  
Densities Of States ◽  
Local Densities ◽  
Energy Of Formation

ABSTRACTThe linear muffin-tin orbital supercell band-structure method is used to calculate the interface energy of formation, band offsets and local densities of states at the latticematched (110) heterojunctions between (cubic SiC)/(cubic AIN), (cubic SiC)/(cubic BP) and (diamond C)/(cubic BN). The lowest energy bonding configuration for SiC/AIN is found to be Si to N and C to Al bonding while for SiC/BP, Si is found to bind to B and C to P. The causes for these preferred bonding configurations are explained in terms of electrostatic effects. The band offsets are found to be of type II for SiC/BP and SiC/BN and of type I for SiC/AIN.

Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions

2004 ◽  
Vol 21 (2-4) ◽  
pp. 308-311 ◽  
Author(s):  
K Ohdaira ◽  
H Murata ◽  
S Koh ◽  
M Baba ◽  
H Akiyama ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type I ◽  
Type Ii ◽  
Band Alignments ◽  
Self Assembled

scholarly journals A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments

2018 ◽  
Vol 7 (1) ◽  
pp. 35-41
Author(s):  
Garima Bhardwaj ◽  
Sandhya K. ◽  
Richa Dolia ◽  
M. Abu-Samak ◽  
Shalendra Kumar ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Region ◽  
High Gain ◽  
Band Alignment ◽  
Optical Characteristics ◽  
Hamiltonian Matrix ◽  
Type I ◽  
Type Ii ◽  
Te Mode ◽  
Band Alignments

In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.

scholarly journals Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3

2021 ◽  
Author(s):  
Xinyi Xia ◽  
Chaker Fares ◽  
Fan Ren ◽  
Anna Hassa ◽  
Holger von Wenckstern ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Composition Dependence ◽  
Atomic Layer ◽  
Wide Bandgap ◽  
Band Alignment ◽  
Band Offsets ◽  
Layer Deposition ◽  
Semiconductor System ◽  
Band Alignments

Abstract Valence band offsets were measured by X Ray Photoelectron Spectroscopy for SiO2 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys with x= 0.26-0.74 grown with a continuous composition spread to enable investigations of the band alignment as a function of the alloy composition. From measurement of the core levels in the alloys, the bandgaps were determined to range from 5.8 eV (x=0.26) to 7eV (x=0.74). The valence band offsets were -1.2 eV for x=0.26, -0.2 eV for x=0.42, 0.2 eV for x=0.58 and 0.4 eV for x=0.74. Given the bandgap of the SiO2 was 8.7 eV, this led to conduction band offsets of 4.1 eV (x=0.26) to 1.3 eV (x=0.74). The band alignments were nested for x>0.5 , but at lower Al contents the conductions band offsets were negative, with a staggered band alignment. This shows the challenge of finding appropriate dielectrics for this ultra-wide bandgap semiconductor system.

scholarly journals Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 623
Author(s):  
Nazaret Ruiz ◽  
Verónica Braza ◽  
Alicia Gonzalo ◽  
Daniel Fernández ◽  
Teresa Ben ◽  
...  
Keyword(s):  
Solar Cell ◽  
Annealed Sample ◽  
Type I ◽  
Type Ii ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Before And After ◽  
Balanced Structure ◽  
Band Alignments ◽  
Superlattice Structures

Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a significant external quantum efficiency (EQE), with respect to the GaAsSbN bulk layers. Despite the difficulties in characterizing the distribution of N in dilute III-V nitride alloys, in this work we have obtained N-compositional mappings before and after rapid thermal annealing (RTA) in both types of structures, by using a recent methodology based on the treatment of different scanning transmission electron microscopy (STEM) imaging configurations. Texture analysis by gray level co-occurrence matrixes (GLCM) and the measurement of the degree of clustering are used to compare and evaluate the compositional inhomogeneities of N. Comparison with the Sb maps shows that there is no spatial correlation between the N and Sb distributions. Our results reveal that a better homogeneity of N is obtained in type-I SLs, but at the expense of a higher tendency of Sb agglomeration, and the opposite occurs in type-II SLs. The RTA treatments improve the uniformity of N and Sb in both designs, with the annealed sample of type-II SLs being the most balanced structure for MJSCs.

Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots

2015 ◽  
Vol 107 (18) ◽  
pp. 183107 ◽  
Author(s):  
Linlin Su ◽  
Baolai Liang ◽  
Ying Wang ◽  
Qinglin Guo ◽  
Shufang Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type I ◽  
Type Ii ◽  
Band Alignments ◽  
Self Assembled

Photoluminescence of multi-layer GeSi dots grown on Si (001)

2001 ◽  
Vol 667 ◽  
Author(s):  
J. Wan ◽  
Y. H. Luo ◽  
G. L. Jin ◽  
Z. M. Jiang ◽  
J. L. Liu ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Layer Structure ◽  
Peak Position ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Wetting Layer ◽  
Gas Source ◽  
Band Alignments ◽  
Wetting Layers

ABSTRACTTemperature and power dependent photoluminescence measurements were carried out on the multi-layer structure of GeSi dots grown on Si(001) substrate by gas-source molecular beam epitaxy. The transfer of photon-induced carriers from wetting layers into the dots and the region near the dots was evidenced. Different power dependent behaviors of the photoluminescence peak position were observed for the dots and the wetting layer. Accordingly, type-II and type-I band alignments were proposed for the dots and the wetting layers, respectively. After annealing, the photoluminescence peaks from the dots and the wetting layers showed blueshift due to the atomic intermixing. For the samples annealed at temperature above 850°C for 5min, the band alignment of the dots changes from type-II to type-I.

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