Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

2012 ◽  
Vol 100 (3) ◽  
pp. 033102 ◽  
Author(s):  
Yu. I. Mazur ◽  
V. G. Dorogan ◽  
G. J. Salamo ◽  
G. G. Tarasov ◽  
B. L. Liang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Type I ◽  
Type Ii ◽  
Band Alignments

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

2013 ◽  
Vol 46 (9) ◽  
pp. 095103 ◽  
Author(s):  
A Hospodková ◽  
M Zíková ◽  
J Pangrác ◽  
J Oswald ◽  
J Kubištová ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Gaas Quantum Dot ◽  
Layer Composition

Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions

2004 ◽  
Vol 21 (2-4) ◽  
pp. 308-311 ◽  
Author(s):  
K Ohdaira ◽  
H Murata ◽  
S Koh ◽  
M Baba ◽  
H Akiyama ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type I ◽  
Type Ii ◽  
Band Alignments ◽  
Self Assembled

Coexistence of type-I and type-II band lineups in Cd(Te,Se)∕ZnSe quantum-dot structures

2006 ◽  
Vol 89 (12) ◽  
pp. 123110 ◽  
Author(s):  
A. A. Toropov ◽  
I. V. Sedova ◽  
O. G. Lyublinskaya ◽  
S. V. Sorokin ◽  
A. A. Sitnikova ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Type I ◽  
Type Ii ◽  
Znse Quantum Dot

scholarly journals A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments

2018 ◽  
Vol 7 (1) ◽  
pp. 35-41
Author(s):  
Garima Bhardwaj ◽  
Sandhya K. ◽  
Richa Dolia ◽  
M. Abu-Samak ◽  
Shalendra Kumar ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Region ◽  
High Gain ◽  
Band Alignment ◽  
Optical Characteristics ◽  
Hamiltonian Matrix ◽  
Type I ◽  
Type Ii ◽  
Te Mode ◽  
Band Alignments

In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.

scholarly journals Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

2015 ◽  
Vol 106 (10) ◽  
pp. 103104 ◽  
Author(s):  
Hai-Ming Ji ◽  
Baolai Liang ◽  
Paul J. Simmonds ◽  
Bor-Chau Juang ◽  
Tao Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Type I ◽  
Type Ii ◽  
Hybrid Type ◽  
Enhanced Photoluminescence ◽  
Gaas Quantum Dot

scholarly journals Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 623
Author(s):  
Nazaret Ruiz ◽  
Verónica Braza ◽  
Alicia Gonzalo ◽  
Daniel Fernández ◽  
Teresa Ben ◽  
...  
Keyword(s):  
Solar Cell ◽  
Annealed Sample ◽  
Type I ◽  
Type Ii ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Before And After ◽  
Balanced Structure ◽  
Band Alignments ◽  
Superlattice Structures

Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a significant external quantum efficiency (EQE), with respect to the GaAsSbN bulk layers. Despite the difficulties in characterizing the distribution of N in dilute III-V nitride alloys, in this work we have obtained N-compositional mappings before and after rapid thermal annealing (RTA) in both types of structures, by using a recent methodology based on the treatment of different scanning transmission electron microscopy (STEM) imaging configurations. Texture analysis by gray level co-occurrence matrixes (GLCM) and the measurement of the degree of clustering are used to compare and evaluate the compositional inhomogeneities of N. Comparison with the Sb maps shows that there is no spatial correlation between the N and Sb distributions. Our results reveal that a better homogeneity of N is obtained in type-I SLs, but at the expense of a higher tendency of Sb agglomeration, and the opposite occurs in type-II SLs. The RTA treatments improve the uniformity of N and Sb in both designs, with the annealed sample of type-II SLs being the most balanced structure for MJSCs.

Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots

2015 ◽  
Vol 107 (18) ◽  
pp. 183107 ◽  
Author(s):  
Linlin Su ◽  
Baolai Liang ◽  
Ying Wang ◽  
Qinglin Guo ◽  
Shufang Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type I ◽  
Type Ii ◽  
Band Alignments ◽  
Self Assembled
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