scholarly journals Probing the Dzyaloshinskii-Moriya interaction in CoFeB ultrathin films using domain wall creep and Brillouin light spectroscopy

2016 ◽  
Vol 94 (10) ◽  
Author(s):  
R. Soucaille ◽  
M. Belmeguenai ◽  
J. Torrejon ◽  
J.-V. Kim ◽  
T. Devolder ◽  
...  
2016 ◽  
Vol 94 (21) ◽  
Author(s):  
Gy. J. Vida ◽  
E. Simon ◽  
L. Rózsa ◽  
K. Palotás ◽  
L. Szunyogh

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.


2018 ◽  
Vol 4 (12) ◽  
pp. eaav0265 ◽  
Author(s):  
Tomohiro Koyama ◽  
Yoshinobu Nakatani ◽  
Jun’ichi Ieda ◽  
Daichi Chiba

We show that the electric field (EF) can control the domain wall (DW) velocity in a Pt/Co/Pd asymmetric structure. With the application of a gate voltage, a substantial change in DW velocity up to 50 m/s is observed, which is much greater than that observed in previous studies. Moreover, modulation of a DW velocity exceeding 100 m/s is demonstrated in this study. An EF-induced change in the interfacial Dzyaloshinskii-Moriya interaction (DMI) up to several percent is found to be the origin of the velocity modulation. The DMI-mediated velocity change shown here is a fundamentally different mechanism from that caused by EF-induced anisotropy modulation. Our results will pave the way for the electrical manipulation of spin structures and dynamics via DMI control, which can enhance the performance of spintronic devices.


2019 ◽  
Vol 122 (14) ◽  
Author(s):  
Kyoung-Whan Kim ◽  
Seo-Won Lee ◽  
Jung-Hwan Moon ◽  
Gyungchoon Go ◽  
Aurélien Manchon ◽  
...  

2020 ◽  
Vol 116 (22) ◽  
pp. 222406
Author(s):  
Kostiantyn V. Yershov ◽  
Volodymyr P. Kravchuk ◽  
Denis D. Sheka ◽  
Jeroen van den Brink ◽  
Avadh Saxena

2019 ◽  
Vol 100 (22) ◽  
Author(s):  
Dae-Yun Kim ◽  
Nam-Hui Kim ◽  
Yong-Keun Park ◽  
Min-Ho Park ◽  
Joo-Sung Kim ◽  
...  

2015 ◽  
Vol 51 (11) ◽  
pp. 1-3 ◽  
Author(s):  
F. C. Ummelen ◽  
D.-S. Han ◽  
J.-S. Kim ◽  
H. J. M. Swagten ◽  
B. Koopmans

Author(s):  
F. Ummelen ◽  
D. Han ◽  
J. Kim ◽  
H. Swagten ◽  
B. Koopmans

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