Intrinsic carrier scattering mechanism in anataseTiO2investigated by ultraviolet-pump terahertz-probe spectroscopy

2016 ◽  
Vol 94 (4) ◽  
Author(s):  
Y. Matsui ◽  
T. Terashige ◽  
R. Uchida ◽  
T. Miyamoto ◽  
H. Yada ◽  
...  
Keyword(s):  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Probe Spectroscopy

An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGD04
Author(s):  
Katsuhiro Kutsuki ◽  
Eiji Kagoshima ◽  
Toru Onishi ◽  
Jun Saito ◽  
Kensaku Yamamoto ◽  
...  
Keyword(s):  
Extraction Method ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Channel Resistance

Tellurium doped n-type Zintl Zr3Ni3Sb4 thermoelectric materials: Balance between carrier-scattering mechanism and bipolar effect

2017 ◽  
Vol 2 ◽  
pp. 54-61 ◽  
Author(s):  
Zihang Liu ◽  
Jun Mao ◽  
Shengyuan Peng ◽  
Binqiang Zhou ◽  
Weihong Gao ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Materials Balance

Transport Properties of Thermoelectric Nanocomposites

2009 ◽  
Vol 1166 ◽  
Author(s):  
Lilia M Woods ◽  
Adian Popescu ◽  
Joshua Martin ◽  
George S. Nolas
Keyword(s):  
Experimental Data ◽  
Transport Process ◽  
Scattering Mechanism ◽  
Optimum Regime ◽  
Thermoelectric Transport ◽  
Potential Barriers ◽  
Barrier Heights ◽  
Carrier Scattering ◽  
Key Factor

AbstractWe present a theoretical model for carrier conductivity and Seebeck coefficient of thermoelectric materials composed of nanogranular regions. The model is used to successfully describe experimental data for chalcogenide PbTe nanocomposites. We also present similar calculations for skutterudite CoSb3 nanocomposites. The carrier scattering mechanism is considered explicitly and it is determined that it is a key factor in the thermoelectric transport process. The grain interfaces are described as potential barriers. We investigate theoretically the role of the barrier heights, widths, and distances between the barriers to obtain an optimum regime for the composites thermoelectric characetristics.

scholarly journals Infrared study of carrier scattering mechanism in ion-gated graphene

2019 ◽  
Vol 114 (8) ◽  
pp. 083503 ◽  
Author(s):  
Kwangnam Yu ◽  
Jiwon Jeon ◽  
Jiho Kim ◽  
Chang Won Oh ◽  
Yongseok Yoon ◽  
...  
Keyword(s):  
Scattering Mechanism ◽  
Infrared Study ◽  
Carrier Scattering

scholarly journals Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials

2017 ◽  
Vol 114 (40) ◽  
pp. 10548-10553 ◽  
Author(s):  
Jun Mao ◽  
Jing Shuai ◽  
Shaowei Song ◽  
Yixuan Wu ◽  
Rebecca Dally ◽  
...  
Keyword(s):  
Power Factor ◽  
Carrier Mobility ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Substantial Improvement ◽  
Thermoelectric Performance ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Ionized Impurity Scattering ◽  
Higher Carrier Mobility

Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm2⋅V−1⋅s−1 is obtained, thus leading to a notably enhanced power factor of ∼13 μW⋅cm−1⋅K−2 from ∼5 μW⋅cm−1⋅K−2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems.

Free carrier scattering mechanism in Bi2Se3 crystals

1973 ◽  
Vol 23 (10) ◽  
pp. 1111-1117 ◽  
Author(s):  
I. F. Bogatyrev ◽  
J. Horák ◽  
A. Vaško ◽  
L. Tichý
Keyword(s):  
Free Carrier ◽  
Scattering Mechanism ◽  
Carrier Scattering

Quantum Coherence in Ultrafast Semiconductor Spectroscopy

1998 ◽  
Vol 07 (02) ◽  
pp. 227-239 ◽  
Author(s):  
Hartmut Haug
Keyword(s):  
Quantum Coherence ◽  
Stark Effect ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Atomic Spectroscopy ◽  
Carrier Scattering ◽  
Pump And Probe ◽  
Quantum Kinetics ◽  
Probe Spectroscopy ◽  
Short Time

Coherent optical phenomena such as the optical Stark effect, Rabi flopping, photon echo and quantum beating which are well-known in atomic spectroscopy can also be observed in semiconductors by using femtosecond laser pulses. On these short time scales, the quantum coherence of the optical excitations in the solid do not only influence the optical properties but change at the same time the relaxation and dephasing kinetics. The quasi-classical Boltzmann kinetics has to be replaced by quantum kinetics. Coherence leads to the appearance of memory in the scattering integrals. For femtosecond four-wave mixing and pump-and-probe spectroscopy the use of quantum kinetics for LO-phonon and for carrier-carrier scattering will be reviewed.

scholarly journals Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 411
Author(s):  
Chul Kang ◽  
Gyuseok Lee ◽  
Woo-Jung Lee ◽  
Dae-Hyung Cho ◽  
Inhee Maeng ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Dynamics ◽  
Thz Radiation ◽  
Terahertz Emission ◽  
Optical Pump ◽  
Carrier Scattering ◽  
Ultrafast Carrier ◽  
Probe Spectroscopy ◽  
Surge Current ◽  
Ion Implanted

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier–carrier scattering lifetimes and decrease the bandgap transition lifetime.

scholarly journals The polylogarithm and the Lambert W functions in thermoelectrics

2011 ◽  
Vol 89 (11) ◽  
pp. 1171-1178 ◽  
Author(s):  
Muralikrishna Molli ◽  
K. Venkataramaniah ◽  
S.R. Valluri
Keyword(s):  
Functional Equations ◽  
Figure Of Merit ◽  
Chemical Potential ◽  
Complex Variables ◽  
Lambert W Function ◽  
Scattering Mechanism ◽  
Degenerate Semiconductor ◽  
Carrier Scattering ◽  
Electrical Conductivities ◽  
Extremum Conditions

In this work, we determine the conditions for the extremum of the figure of merit, θ2, in a degenerate semiconductor for thermoelectric (TE) applications. We study the variation of the function θ2 with respect to the reduced chemical potential μ* using relations involving polylogarithms of both integral and nonintegral orders. We present the relevant equations for the thermopower, thermal, and electrical conductivities that result in optimizing θ2 and obtaining the extremum equations. We discuss the different cases that arise for various values of r, which depends on the type of carrier scattering mechanism present in the semiconductor. We also present the important extremum conditions for θ2 obtained by extremizing the TE power factor and the thermal conductivity separately. In this case, simple functional equations, which lead to solutions in terms of the Lambert W function, result. We also present some solutions for the zeros of the polylogarithms. Our analysis allows for the possibility of considering the reduced chemical potential and the index r of the polylogarithm as complex variables.

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