Free carrier scattering mechanism in Bi2Se3 crystals

1973 ◽  
Vol 23 (10) ◽  
pp. 1111-1117 ◽  
Author(s):  
I. F. Bogatyrev ◽  
J. Horák ◽  
A. Vaško ◽  
L. Tichý
Keyword(s):  
Free Carrier ◽  
Scattering Mechanism ◽  
Carrier Scattering

scholarly journals Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

2021 ◽  
Vol 61 (2) ◽  
Author(s):  
J.V. Vaitkus ◽  
A. Mekys ◽  
Š. Vaitekonis
Keyword(s):  
Neutron Irradiation ◽  
Electron Mobility ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Radiation Detector ◽  
Forward Bias ◽  
Free Carrier ◽  
Detector Efficiency ◽  
Applied Model ◽  
Carrier Scattering

An increase of neutron irradiation fluence caused a decrease of Si radiation detector efficiency that was exceptionally well seen at 1017 neutron/cm2 fluence when the observed I–V characteristic of p-n junction under forward bias and under reverse bias became similar. Therefore the investigation of free carrier mobility could be a key experiment to understand the change of heavily irradiated silicon. The electron mobility was investigated by magnetoresistance means in microstrip silicon samples at temperature range T = 200–276 K. The analysis included the free carrier scattering by phonons, ionized impurities, dipoles and clusters and a contribution of each process was found by fitting the mobility dependence on temperature. The analysis of experimental data clearly demonstrated that the applied model did not explain the mobility in the samples irradiated to the highest fluence. Therefore a new concept of carrier transport is needed, and, as a conclusion, it could be stated that Si irradiated above 1016 cm–2 fluence (and up to 1020 cm–2) is a disordered material with the clusters.

An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGD04
Author(s):  
Katsuhiro Kutsuki ◽  
Eiji Kagoshima ◽  
Toru Onishi ◽  
Jun Saito ◽  
Kensaku Yamamoto ◽  
...  
Keyword(s):  
Extraction Method ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Channel Resistance

Tellurium doped n-type Zintl Zr3Ni3Sb4 thermoelectric materials: Balance between carrier-scattering mechanism and bipolar effect

2017 ◽  
Vol 2 ◽  
pp. 54-61 ◽  
Author(s):  
Zihang Liu ◽  
Jun Mao ◽  
Shengyuan Peng ◽  
Binqiang Zhou ◽  
Weihong Gao ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Materials Balance

Free Carrier Scattering in Hg0.77Mn0.23Se at Low Temperatures

1991 ◽  
Vol 168 (2) ◽  
pp. K103-K107 ◽  
Author(s):  
O. Žižić ◽  
Z. V. Popović ◽  
A. Milutinović ◽  
V. A. Kulbachinskii
Keyword(s):  
Low Temperatures ◽  
Free Carrier ◽  
Carrier Scattering

Transport Properties of Thermoelectric Nanocomposites

2009 ◽  
Vol 1166 ◽  
Author(s):  
Lilia M Woods ◽  
Adian Popescu ◽  
Joshua Martin ◽  
George S. Nolas
Keyword(s):  
Experimental Data ◽  
Transport Process ◽  
Scattering Mechanism ◽  
Optimum Regime ◽  
Thermoelectric Transport ◽  
Potential Barriers ◽  
Barrier Heights ◽  
Carrier Scattering ◽  
Key Factor

AbstractWe present a theoretical model for carrier conductivity and Seebeck coefficient of thermoelectric materials composed of nanogranular regions. The model is used to successfully describe experimental data for chalcogenide PbTe nanocomposites. We also present similar calculations for skutterudite CoSb3 nanocomposites. The carrier scattering mechanism is considered explicitly and it is determined that it is a key factor in the thermoelectric transport process. The grain interfaces are described as potential barriers. We investigate theoretically the role of the barrier heights, widths, and distances between the barriers to obtain an optimum regime for the composites thermoelectric characetristics.

On the influence of free-carrier scattering mechanisms on semiconductor thin-film plasma spectra

1986 ◽  
Vol 26 (2) ◽  
pp. 105-109 ◽  
Author(s):  
Y. Demakopoulou ◽  
D. Siapkas ◽  
N.N. Zheleva ◽  
D.B. Kushev
Keyword(s):  
Thin Film ◽  
Free Carrier ◽  
Scattering Mechanisms ◽  
Carrier Scattering ◽  
Semiconductor Thin Film

scholarly journals Infrared study of carrier scattering mechanism in ion-gated graphene

2019 ◽  
Vol 114 (8) ◽  
pp. 083503 ◽  
Author(s):  
Kwangnam Yu ◽  
Jiwon Jeon ◽  
Jiho Kim ◽  
Chang Won Oh ◽  
Yongseok Yoon ◽  
...  
Keyword(s):  
Scattering Mechanism ◽  
Infrared Study ◽  
Carrier Scattering

scholarly journals Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials

2017 ◽  
Vol 114 (40) ◽  
pp. 10548-10553 ◽  
Author(s):  
Jun Mao ◽  
Jing Shuai ◽  
Shaowei Song ◽  
Yixuan Wu ◽  
Rebecca Dally ◽  
...  
Keyword(s):  
Power Factor ◽  
Carrier Mobility ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Substantial Improvement ◽  
Thermoelectric Performance ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Ionized Impurity Scattering ◽  
Higher Carrier Mobility

Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm2⋅V−1⋅s−1 is obtained, thus leading to a notably enhanced power factor of ∼13 μW⋅cm−1⋅K−2 from ∼5 μW⋅cm−1⋅K−2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems.

Free-Carrier Optical Nonlinearity Due to Carrier Scattering and Nonparabolicity

1970 ◽  
Vol 1 (8) ◽  
pp. 3426-3430 ◽  
Author(s):  
M. S. Sodha ◽  
P. K. Dubey ◽  
S. K. Sharma ◽  
P. K. Kaw
Keyword(s):  
Optical Nonlinearity ◽  
Free Carrier ◽  
Carrier Scattering
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