Tellurium doped n-type Zintl Zr3Ni3Sb4 thermoelectric materials: Balance between carrier-scattering mechanism and bipolar effect

2017 ◽  
Vol 2 ◽  
pp. 54-61 ◽  
Author(s):  
Zihang Liu ◽  
Jun Mao ◽  
Shengyuan Peng ◽  
Binqiang Zhou ◽  
Weihong Gao ◽  
...  
2020 ◽  
Vol 59 (SG) ◽  
pp. SGGD04
Author(s):  
Katsuhiro Kutsuki ◽  
Eiji Kagoshima ◽  
Toru Onishi ◽  
Jun Saito ◽  
Kensaku Yamamoto ◽  
...  

2009 ◽  
Vol 1166 ◽  
Author(s):  
Lilia M Woods ◽  
Adian Popescu ◽  
Joshua Martin ◽  
George S. Nolas

AbstractWe present a theoretical model for carrier conductivity and Seebeck coefficient of thermoelectric materials composed of nanogranular regions. The model is used to successfully describe experimental data for chalcogenide PbTe nanocomposites. We also present similar calculations for skutterudite CoSb3 nanocomposites. The carrier scattering mechanism is considered explicitly and it is determined that it is a key factor in the thermoelectric transport process. The grain interfaces are described as potential barriers. We investigate theoretically the role of the barrier heights, widths, and distances between the barriers to obtain an optimum regime for the composites thermoelectric characetristics.


2020 ◽  
Vol 10 (2) ◽  
pp. 265-271
Author(s):  
Adriana Valério ◽  
Rafaela F.S. Penacchio ◽  
Maurício B. Estradiote ◽  
Marli R. Cantarino ◽  
Fernando A. Garcia ◽  
...  


2019 ◽  
Vol 114 (8) ◽  
pp. 083503 ◽  
Author(s):  
Kwangnam Yu ◽  
Jiwon Jeon ◽  
Jiho Kim ◽  
Chang Won Oh ◽  
Yongseok Yoon ◽  
...  

2017 ◽  
Vol 114 (40) ◽  
pp. 10548-10553 ◽  
Author(s):  
Jun Mao ◽  
Jing Shuai ◽  
Shaowei Song ◽  
Yixuan Wu ◽  
Rebecca Dally ◽  
...  

Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm2⋅V−1⋅s−1 is obtained, thus leading to a notably enhanced power factor of ∼13 μW⋅cm−1⋅K−2 from ∼5 μW⋅cm−1⋅K−2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems.


1973 ◽  
Vol 23 (10) ◽  
pp. 1111-1117 ◽  
Author(s):  
I. F. Bogatyrev ◽  
J. Horák ◽  
A. Vaško ◽  
L. Tichý

2013 ◽  
Vol 27 (22) ◽  
pp. 1350108
Author(s):  
FANG JU LI

Ca 2.9 Ce 0.1 Co 4 O 9+δ/x wt% Cu 2 O nanocomposites have been studied as the thermoelectric materials for energy harvesting purpose. We evaluate the thermoelectric properties of the composites through temperature dependent thermopower, thermal conductivity and resistivity measurements. It is found that the introduction of Cu 2 O nanoparticles serves as phonon scattering centers, which reduces the thermal conductivity. The nanoinclusions contribute to a remarkable increase in electrical resistivity due to enhanced carrier scattering. As a result, Cu 2 O nanoinclusions do not succeed in improving ZT of Ca 2.9 Ce 0.1 Co 4 O 9+δ material.


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Qingyong Ren ◽  
Chenguang Fu ◽  
Qinyi Qiu ◽  
Shengnan Dai ◽  
Zheyuan Liu ◽  
...  

2016 ◽  
Vol 94 (4) ◽  
Author(s):  
Y. Matsui ◽  
T. Terashige ◽  
R. Uchida ◽  
T. Miyamoto ◽  
H. Yada ◽  
...  

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