scholarly journals Thermal spin injection and interface insensitivity in permalloy/aluminum metallic nonlocal spin valves

2016 ◽  
Vol 94 (2) ◽  
Author(s):  
A. Hojem ◽  
D. Wesenberg ◽  
B. L. Zink
Keyword(s):  
2015 ◽  
Vol 252 (11) ◽  
pp. 2395-2400 ◽  
Author(s):  
Marc Drögeler ◽  
Frank Volmer ◽  
Maik Wolter ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  

2009 ◽  
Vol 95 (2) ◽  
pp. 022519 ◽  
Author(s):  
X. J. Wang ◽  
H. Zou ◽  
L. E. Ocola ◽  
Y. Ji

2011 ◽  
Author(s):  
Wei Han ◽  
J. R. Chen ◽  
K. M. McCreary ◽  
H. Wen ◽  
R. K. Kawakami

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.


Nano Letters ◽  
2017 ◽  
Vol 17 (6) ◽  
pp. 3877-3883 ◽  
Author(s):  
Yunqiu Kelly Luo ◽  
Jinsong Xu ◽  
Tiancong Zhu ◽  
Guanzhong Wu ◽  
Elizabeth J. McCormick ◽  
...  

2020 ◽  
Author(s):  
Naoto Yamashita ◽  
Soobeom Lee ◽  
Ryo Ohshima ◽  
Ei Shigematsu ◽  
Hayato Koike ◽  
...  

Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300°C, resulting in the formation of a Au/Si interface. The Au-Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 mm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400°C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.


2013 ◽  
Vol 102 (7) ◽  
pp. 079903 ◽  
Author(s):  
Y. P. Liu ◽  
H. Idzuchi ◽  
Y. Fukuma ◽  
O. Rousseau ◽  
Y. Otani ◽  
...  

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 596
Author(s):  
Qipeng Tian ◽  
Shijie Xie

This review introduces some important spin phenomena of organic molecules and solids and their devices: Organic spin injection and transport, organic spin valves, organic magnetic field effects, organic excited ferromagnetism, organic spin currents, etc. We summarize the experimental and theoretical progress of organic spintronics in recent years and give prospects.


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