scholarly journals Erratum: “Spin injection properties in trilayer graphene lateral spin valves” [Appl. Phys. Lett. 102, 033105 (2013)]

2013 ◽  
Vol 102 (7) ◽  
pp. 079903 ◽  
Author(s):  
Y. P. Liu ◽  
H. Idzuchi ◽  
Y. Fukuma ◽  
O. Rousseau ◽  
Y. Otani ◽  
...  
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Trilayer Graphene

scholarly journals Spin injection properties in trilayer graphene lateral spin valves

2013 ◽  
Vol 102 (3) ◽  
pp. 033105 ◽  
Author(s):  
Y. P. Liu ◽  
H. Idzuchi ◽  
Y. Fukuma ◽  
O. Rousseau ◽  
Y. Otani ◽  
...  
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Trilayer Graphene

scholarly journals Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al2O3 spin injection and detection barriers

2015 ◽  
Vol 252 (11) ◽  
pp. 2395-2400 ◽  
Author(s):  
Marc Drögeler ◽  
Frank Volmer ◽  
Maik Wolter ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Spin Injection ◽  
Atomic Layer ◽  
Bilayer Graphene ◽  
Spin Valves ◽  
Bottom Up ◽  
Spin Injection And Detection

High spin injection polarization at an elevated dc bias in tunnel-junction-based lateral spin valves

2009 ◽  
Vol 95 (2) ◽  
pp. 022519 ◽  
Author(s):  
X. J. Wang ◽  
H. Zou ◽  
L. E. Ocola ◽  
Y. Ji
Keyword(s):  
High Spin ◽  
Tunnel Junction ◽  
Spin Injection ◽  
Spin Valves ◽  
Dc Bias

Enhanced spin injection efficiency and extended spin lifetimes in graphene spin valves

2011 ◽  
Author(s):  
Wei Han ◽  
J. R. Chen ◽  
K. M. McCreary ◽  
H. Wen ◽  
R. K. Kawakami
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Injection Efficiency

scholarly journals Investigation of the thermal tolerance of silicon-based lateral spin valves

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

scholarly journals Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Nano Letters ◽  
2017 ◽  
Vol 17 (6) ◽  
pp. 3877-3883 ◽  
Author(s):  
Yunqiu Kelly Luo ◽  
Jinsong Xu ◽  
Tiancong Zhu ◽  
Guanzhong Wu ◽  
Elizabeth J. McCormick ◽  
...  
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Monolayer Mos2 ◽  
Layer Graphene ◽  
Few Layer Graphene

scholarly journals Improved Thermal Tolerance of Silicon-based Lateral Spin Valves

2020 ◽  
Author(s):  
Naoto Yamashita ◽  
Soobeom Lee ◽  
Ryo Ohshima ◽  
Ei Shigematsu ◽  
Hayato Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300°C, resulting in the formation of a Au/Si interface. The Au-Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 mm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400°C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

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