High spin injection polarization at an elevated dc bias in tunnel-junction-based lateral spin valves

2009 ◽  
Vol 95 (2) ◽  
pp. 022519 ◽  
Author(s):  
X. J. Wang ◽  
H. Zou ◽  
L. E. Ocola ◽  
Y. Ji
Keyword(s):  
High Spin ◽  
Tunnel Junction ◽  
Spin Injection ◽  
Spin Valves ◽  
Dc Bias

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

scholarly journals Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al2O3 spin injection and detection barriers

2015 ◽  
Vol 252 (11) ◽  
pp. 2395-2400 ◽  
Author(s):  
Marc Drögeler ◽  
Frank Volmer ◽  
Maik Wolter ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Spin Injection ◽  
Atomic Layer ◽  
Bilayer Graphene ◽  
Spin Valves ◽  
Bottom Up ◽  
Spin Injection And Detection

Enhanced spin injection efficiency and extended spin lifetimes in graphene spin valves

2011 ◽  
Author(s):  
Wei Han ◽  
J. R. Chen ◽  
K. M. McCreary ◽  
H. Wen ◽  
R. K. Kawakami
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Injection Efficiency

Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions

2019 ◽  
Vol 7 (14) ◽  
pp. 4079-4088 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Xiaocha Wang
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Spin Injection ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance ◽  
Spin Polarized

Large tunneling magnetoresistance, perfect spin injection and fully spin-polarized photocurrent are realized in a LSMO/T4/LSMO organic magnetic tunnel junction.

scholarly journals Investigation of the thermal tolerance of silicon-based lateral spin valves

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

scholarly journals Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Nano Letters ◽  
2017 ◽  
Vol 17 (6) ◽  
pp. 3877-3883 ◽  
Author(s):  
Yunqiu Kelly Luo ◽  
Jinsong Xu ◽  
Tiancong Zhu ◽  
Guanzhong Wu ◽  
Elizabeth J. McCormick ◽  
...  
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Monolayer Mos2 ◽  
Layer Graphene ◽  
Few Layer Graphene
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