scholarly journals Discriminating a deep gallium antisite defect from shallow acceptors in GaAs using supercell calculations

2016 ◽  
Vol 93 (12) ◽  
Author(s):  
Peter A. Schultz
Keyword(s):  
Antisite Defect ◽  
Shallow Acceptors

scholarly journals Role of Chemistry and Crystal Structure on the Electronic Defect States in Cs-Based Halide Perovskites

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1032
Author(s):  
Anirban Naskar ◽  
Rabi Khanal ◽  
Samrat Choudhury
Keyword(s):  
Crystal Structure ◽  
Density Functional ◽  
Covalent Bond ◽  
Density Functional Theory Calculations ◽  
Antisite Defect ◽  
Defect States ◽  
Functional Theory ◽  
Electronic Defect ◽  
Constituent Elements

The electronic structure of a series perovskites ABX3 (A = Cs; B = Ca, Sr, and Ba; X = F, Cl, Br, and I) in the presence and absence of antisite defect XB were systematically investigated based on density-functional-theory calculations. Both cubic and orthorhombic perovskites were considered. It was observed that for certain perovskite compositions and crystal structure, presence of antisite point defect leads to the formation of electronic defect state(s) within the band gap. We showed that both the type of electronic defect states and their individual energy level location within the bandgap can be predicted based on easily available intrinsic properties of the constituent elements, such as the bond-dissociation energy of the B–X and X–X bond, the X–X covalent bond length, and the atomic size of halide (X) as well as structural characteristic such as B–X–B bond angle. Overall, this work provides a science-based generic principle to design the electronic states within the band structure in Cs-based perovskites in presence of point defects such as antisite defect.

Photoluminescence of shallow acceptors in Al0.28Ga0.72As

1983 ◽  
Vol 54 (1) ◽  
pp. 341-345 ◽  
Author(s):  
J. M. Ballingall ◽  
D. M. Collins
Keyword(s):  
Shallow Acceptors

Metastable Variations of the Fill Factor in CIGS Thin Film Solar Cells

2009 ◽  
Vol 1165 ◽  
Author(s):  
Aleksander Urbaniak ◽  
Małgorzata Igalson
Keyword(s):  
Fill Factor ◽  
Elevated Temperatures ◽  
Reverse Voltage ◽  
Cell Behaviors ◽  
Cigs Thin Film ◽  
Current Voltage ◽  
Shallow Acceptors ◽  
Current Voltage Characteristics ◽  
Diode Behavior ◽  
Kinetics Of

AbstractWe investigate the origin of fill factor changes induced by reverse bias treatment. Evolution of current-voltage characteristics have been measured during application of reverse voltage bias. Two different cell behaviors have been identified. At elevated temperatures one kind of the devices strongly deteriorates and exhibit so called double diode behavior. On the other hand, in the same conditions another cells keep their fill factor almost constant. We correlate the fill factor changes with the kinetics of capacitance and show that although increased number of shallow acceptors itself cannot induce this severe FF deterioration, it may strongly influence position of the Fermi level at the heterointerface that in a presence of an electron barrier is crucial for the device behavior.

Hydrogen in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Low Temperatures ◽  
Atomic Hydrogen ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Surface Damage ◽  
Defect Complexes ◽  
Microscopic Models ◽  
Related Defect ◽  
Shallow Acceptors ◽  
Technological Interest

ABSTRACTThe ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest. Recent results on the deactivation of the shallow acceptors in Si are compared with similar experiments in other semiconductors, microscopic models are proposed, and the implications for the states of hydrogen in the Si lattice at a variety of temperatures, and the diffusivity of some of these different states, is discussed. New results on the migration of atomic hydrogen under electronic stimulation are also detailed, along with a compendium of the deep levels in Si passivated by reaction with hydrogen. Surface damage by hydrogen-containing plasmas, and the infrared and electrical properties of H-related defect complexes are also reviewed.

Effects of traps and shallow acceptors on the steady-state photoluminescence of quantum-well wires

1997 ◽  
Vol 81 (12) ◽  
pp. 7945-7951 ◽  
Author(s):  
S. T. Pérez-Merchancano ◽  
M. de Dios-Leyva ◽  
L. E. Oliveira
Keyword(s):  
Steady State ◽  
Quantum Well ◽  
Quantum Well Wires ◽  
Shallow Acceptors

scholarly journals Silver vacancy concentration engineering leading to the ultralow lattice thermal conductivity and improved thermoelectric performance of Ag1-xInTe2

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yaqiong Zhong ◽  
Yong Luo ◽  
Xie Li ◽  
Jiaolin Cui
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Point Defects ◽  
Lattice Thermal Conductivity ◽  
Vacancy Concentration ◽  
Antisite Defect ◽  
Thermoelectric Performance ◽  
Callaway Model

AbstractAgInTe2 compound has not received enough recognition in thermoelectrics, possibly due to the fact that the presence of Te vacancy (VTe) and antisite defect of In at Ag site (InAg) degrades its electrical conductivity. In this work, we prepared the Ag1-xInTe2 compounds with substoichiometric amounts of Ag and observed an ultralow lattice thermal conductivity (κL = 0.1 Wm−1K−1) for the sample at x = 0.15 and 814 K. This leads to more than 2-fold enhancement in the ZT value (ZT = 0.62) compared to the pristine AgInTe2. In addition, we have traced the origin of the untralow κL using the Callaway model. The results attained in this work suggest that the engineering of the silver vacancy (VAg) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe2, realized by the increased point defects and modified crystal structure distortion as the VAg concentration increases.

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