Paramagnetic Resonance of the Shallow Acceptors Zn and Cd in GaAs [Letter to the Editor]

R. S. Title

doi:10.1147/rd.71.0068

Paramagnetic Resonance of the Shallow Acceptors Zn and Cd in GaAs [Letter to the Editor]

IBM Journal of Research and Development ◽

10.1147/rd.71.0068 ◽

1963 ◽

Vol 7 (1) ◽

pp. 68-69 ◽

Cited By ~ 16

Author(s):

R. S. Title

Keyword(s):

Paramagnetic Resonance ◽

Letter To The Editor ◽

Shallow Acceptors

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Optical and EPR Study of Defects in Cadmium Germanium Arsenide

MRS Proceedings ◽

10.1557/proc-744-m8.32 ◽

2002 ◽

Vol 744 ◽

Author(s):

Lihua Bai ◽

N. Y. Garces ◽

Nanying Yang ◽

P. G. Schunemann ◽

S. D. Setzler ◽

...

Keyword(s):

Absorption Band ◽

Optical Absorption ◽

Room Temperature ◽

Hole Concentration ◽

Paramagnetic Defect ◽

Paramagnetic Resonance ◽

Anion Site ◽

Shallow Acceptors ◽

P Type ◽

Cadmium Germanium Arsenide

ABSTRACTBulk crystals of CdGeAs2 have been characterized using photoluminescence (PL), optical absorption, Hall effect, and electron paramagnetic resonance (EPR) techniques. An absorption band near 5.5 microns at room temperature is observed in all of the p-type samples we have studied. A correlation between the magnitude of this optical absorption and the excess hole concentration at room temperature is established. Also, an EPR signal is found to correlate with the strength of this absorption band. PL data are consistent with an increased concentration of shallow acceptors being present in high-absorption samples. From the EPR data, we suggest that a model for the paramagnetic defect associated with the absorption at 5.5 microns may be an acceptor on an anion site.

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Pl And Epr Spectroscopy Of Point Defects In Detector-Grade Cd1−xZnxTe

MRS Proceedings ◽

10.1557/proc-487-71 ◽

1997 ◽

Vol 487 ◽

Author(s):

C. I. Rablau ◽

S. D. Setzler ◽

L. E. Halliburton ◽

F. P. Doty ◽

N. C. Giles

Keyword(s):

Point Defects ◽

Room Temperature ◽

Gamma Ray ◽

Paramagnetic Resonance ◽

X Ray ◽

Shallow Donors ◽

Shallow Acceptors ◽

Epr Signal ◽

And Control ◽

Electron Paramagnetic

AbstractCadmium zinc telluride (CdZnTe) is an emerging material for room-temperature x-ray and gamma ray detectors. The identification and control of point defects and charge compensators are currently important issues. Low-temperature photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies have been used to characterize point defects in CdZnTe crystals grown by the high-pressure Bridgman technique. Luminescence due to shallow donors, shallow acceptors, and deeper acceptors was monitored for a series of samples. An isotropic EPR signal attributed to shallow hydrogenic donors is observed in all samples, and the concentration of shallow donors has been determined. The nature of the defect centers (impurities, vacancies, vacancy-impurity complexes), and the correlation between defect concentration and device performance is discussed.

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