scholarly journals Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements

2015 ◽  
Vol 92 (7) ◽  
Author(s):  
J. Huang ◽  
J. A. Alexander-Webber ◽  
A. M. R. Baker ◽  
T. J. B. M. Janssen ◽  
A. Tzalenchuk ◽  
...  
Keyword(s):  
Dirac Point ◽  
Epitaxial Graphene ◽  
Temperature Dependent

scholarly journals Carrier Relaxation in Epitaxial Graphene Photoexcited Near the Dirac Point

2011 ◽  
Vol 107 (23) ◽  
Author(s):  
S. Winnerl ◽  
M. Orlita ◽  
P. Plochocka ◽  
P. Kossacki ◽  
M. Potemski ◽  
...  
Keyword(s):  
Dirac Point ◽  
Epitaxial Graphene ◽  
Carrier Relaxation

scholarly journals Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

2014 ◽  
Vol 105 (6) ◽  
pp. 063106 ◽  
Author(s):  
Arseniy Lartsev ◽  
Tom Yager ◽  
Tobias Bergsten ◽  
Alexander Tzalenchuk ◽  
T. J. B. M Janssen ◽  
...  
Keyword(s):  
Corona Discharge ◽  
Carrier Density ◽  
Dirac Point ◽  
Epitaxial Graphene

Probing electron–electron interactions in multilayer epitaxial graphene grown on SiC using temperature-dependent Hall slope

2016 ◽  
Vol 236 ◽  
pp. 41-44 ◽  
Author(s):  
Chieh-I Liu ◽  
Pengjie Wang ◽  
Jian Mi ◽  
Hsin-Yen Lee ◽  
Yi-Ting Wang ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Temperature Dependent ◽  
Electron Interactions

Temperature Dependent Chemical Sensitivity of Epitaxial Graphene

2012 ◽  
Vol 717-720 ◽  
pp. 691-694
Author(s):  
V. Kartheek Nagareddy ◽  
D. Kurt Gaskill ◽  
J.L. Tedesco ◽  
Rachael L. Myers-Ward ◽  
Charles R. Eddy ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Electrical Resistance ◽  
Chemical Sensing ◽  
Epitaxial Graphene ◽  
Aprotic Solvents ◽  
Chemical Sensitivity ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Polar Solvents ◽  
Sensing Mechanism

We investigated the chemical sensing mechanism of epitaxial graphene grown on 6H-SiC (0001) to different polar solvents and their behavior at higher temperatures. We show that at 300 K the sensitivity of the graphene sensor increases exponentially with the dipole moment of a solvent and decreases significantly as the temperature increased to 425 K. Using electrical measurements, we also show that graphene can effectively discriminate between polar protic and polar aprotic solvents with the shift in device electrical resistance at 300 K.

Temperature-dependent terahertz photoconductivity in epitaxial graphene

2014 ◽  
Vol 105 (17) ◽  
pp. 171105 ◽  
Author(s):  
Yu. B. Vasilyev ◽  
G. Yu. Vasileva ◽  
Yu. L. Ivanov ◽  
S. Novikov ◽  
S. N. Danilov
Keyword(s):  
Epitaxial Graphene ◽  
Temperature Dependent

Temperature-Dependent Coherently Controlled Photocurrent Generation in Epitaxial Graphene

2010 ◽  
Author(s):  
Dong Sun ◽  
Charles J. Divin ◽  
Momchil T. Mihnev ◽  
Claire Berger ◽  
Walt de Heer ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Temperature Dependent ◽  
Photocurrent Generation

scholarly journals Unusual renormalization group (RG) flow and temperature-dependent phase transition in strongly-insulating monolayer epitaxial graphene

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31333-31337
Author(s):  
Lung-I. Huang ◽  
Yanfei Yang ◽  
Chieh-Wen Liu ◽  
Randolph E. Elmquist ◽  
Shun-Tsung Lo ◽  
...  
Keyword(s):  
Phase Transition ◽  
Renormalization Group ◽  
Sample Size ◽  
Topological Insulator ◽  
Epitaxial Graphene ◽  
Complex Conductivity ◽  
Effective Sample Size ◽  
Temperature Dependent ◽  
Measurement Temperature

By changing the measurement temperature (T), one can vary the effective sample size so as to study the renormalization group (RG) (or T-driven) flow of a semiconductor, a topological insulator, or a graphene device in the complex conductivity plane.

Berry phase and Landau levels in epitaxial graphene

2016 ◽  
Vol 30 (21) ◽  
pp. 1650156
Author(s):  
Z. Z. Alisultanov
Keyword(s):  
Experimental Data ◽  
Simple Model ◽  
Dirac Point ◽  
Berry Phase ◽  
Epitaxial Graphene ◽  
Landau Levels ◽  
Complete Agreement ◽  
Semiconductor Substrate ◽  
Semiclassical Approach

Within the framework of a simple model, we investigated the Berry phase of epitaxial graphene (EG) formed on a semiconductor substrate. We have shown that this value is equal to [Formula: see text] near the Dirac point. This result is in complete agreement with the experimental data. We have shown that the Berry phase of epitaxial graphene may differ from [Formula: see text] far away from Dirac point. In addition, we investigated the Landau levels (LLs) in the epitaxial graphene within the framework of the semiclassical approach.

scholarly journals Раскрытие энергетической щели в области точки Дирака при осаждении кобальта на поверхность (0001) топологического изолятора BiSbTeSe-=SUB=-2-=/SUB=-

2020 ◽  
Vol 54 (9) ◽  
pp. 859
Author(s):  
А.К. Кавеев ◽  
А.Г Банщиков ◽  
А.Н Терпицкий ◽  
В.А Голяшов ◽  
О.Е Терещенко ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Dirac Point ◽  
Surface States ◽  
Energy Band Gap ◽  
Temperature Dependent ◽  
Molecular Beam Epitaxy Method ◽  
Topological Surface ◽  
First Time

It was shown for the first time that Co subnanometer coaverage, being deposited by molecular beam epitaxy method onto the (0001) surface of the BiSbTeSe2 topological insulator at 330 °C, opens an energy band gap in the spectrum of topological surface states in the region of the Dirac point, with a shift in the position of the Dirac point caused by preliminary deposition of the adsorbate at room temperature. The gap band width is 21 +/- 6 meV. Temperature-dependent measurements in the 15-150 K range did not show any width changes.

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