Temperature-dependent terahertz photoconductivity in epitaxial graphene

2014 ◽  
Vol 105 (17) ◽  
pp. 171105 ◽  
Author(s):  
Yu. B. Vasilyev ◽  
G. Yu. Vasileva ◽  
Yu. L. Ivanov ◽  
S. Novikov ◽  
S. N. Danilov
Keyword(s):  
Epitaxial Graphene ◽  
Temperature Dependent

scholarly journals Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements

2015 ◽  
Vol 92 (7) ◽  
Author(s):  
J. Huang ◽  
J. A. Alexander-Webber ◽  
A. M. R. Baker ◽  
T. J. B. M. Janssen ◽  
A. Tzalenchuk ◽  
...  
Keyword(s):  
Dirac Point ◽  
Epitaxial Graphene ◽  
Temperature Dependent

Probing electron–electron interactions in multilayer epitaxial graphene grown on SiC using temperature-dependent Hall slope

2016 ◽  
Vol 236 ◽  
pp. 41-44 ◽  
Author(s):  
Chieh-I Liu ◽  
Pengjie Wang ◽  
Jian Mi ◽  
Hsin-Yen Lee ◽  
Yi-Ting Wang ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Temperature Dependent ◽  
Electron Interactions

Temperature Dependent Chemical Sensitivity of Epitaxial Graphene

2012 ◽  
Vol 717-720 ◽  
pp. 691-694
Author(s):  
V. Kartheek Nagareddy ◽  
D. Kurt Gaskill ◽  
J.L. Tedesco ◽  
Rachael L. Myers-Ward ◽  
Charles R. Eddy ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Electrical Resistance ◽  
Chemical Sensing ◽  
Epitaxial Graphene ◽  
Aprotic Solvents ◽  
Chemical Sensitivity ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Polar Solvents ◽  
Sensing Mechanism

We investigated the chemical sensing mechanism of epitaxial graphene grown on 6H-SiC (0001) to different polar solvents and their behavior at higher temperatures. We show that at 300 K the sensitivity of the graphene sensor increases exponentially with the dipole moment of a solvent and decreases significantly as the temperature increased to 425 K. Using electrical measurements, we also show that graphene can effectively discriminate between polar protic and polar aprotic solvents with the shift in device electrical resistance at 300 K.

Temperature-Dependent Coherently Controlled Photocurrent Generation in Epitaxial Graphene

2010 ◽  
Author(s):  
Dong Sun ◽  
Charles J. Divin ◽  
Momchil T. Mihnev ◽  
Claire Berger ◽  
Walt de Heer ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
Temperature Dependent ◽  
Photocurrent Generation

scholarly journals Unusual renormalization group (RG) flow and temperature-dependent phase transition in strongly-insulating monolayer epitaxial graphene

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31333-31337
Author(s):  
Lung-I. Huang ◽  
Yanfei Yang ◽  
Chieh-Wen Liu ◽  
Randolph E. Elmquist ◽  
Shun-Tsung Lo ◽  
...  
Keyword(s):  
Phase Transition ◽  
Renormalization Group ◽  
Sample Size ◽  
Topological Insulator ◽  
Epitaxial Graphene ◽  
Complex Conductivity ◽  
Effective Sample Size ◽  
Temperature Dependent ◽  
Measurement Temperature

By changing the measurement temperature (T), one can vary the effective sample size so as to study the renormalization group (RG) (or T-driven) flow of a semiconductor, a topological insulator, or a graphene device in the complex conductivity plane.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

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