Size and dopant-concentration dependence of photoluminescence properties of ion-implanted phosphorus- and boron-codoped Si nanocrystals

2015 ◽  
Vol 91 (16) ◽  
Author(s):  
Toshihiro Nakamura ◽  
Sadao Adachi ◽  
Minoru Fujii ◽  
Hiroshi Sugimoto ◽  
Kenta Miura ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Dopant Concentration ◽  
Photoluminescence Properties ◽  
Si Nanocrystals ◽  
Ion Implanted

Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

2001 ◽  
Vol 45 (8) ◽  
pp. 1487-1494 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
Takayuki Hama ◽  
David E Hole ◽  
Ian W Boyd
Keyword(s):  
Ion Implantation ◽  
Photoluminescence Properties ◽  
Si Nanocrystals

scholarly journals Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing

2016 ◽  
Vol 432 ◽  
pp. 183-188 ◽  
Author(s):  
D.A. Zatsepin ◽  
A.F. Zatsepin ◽  
D.W. Boukhvalov ◽  
E.Z. Kurmaev ◽  
Z.V. Pchelkina ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Thermal Annealing ◽  
Silica Glass ◽  
Photoluminescence Properties ◽  
Before And After ◽  
Ion Implanted

Effect of atmospheric oxidation on the electronic and photoluminescence properties of silicon nanocrystal

2000 ◽  
Vol 72 (1-2) ◽  
pp. 245-255 ◽  
Author(s):  
I. N. Germanenko ◽  
M. Dongol ◽  
Y. B. Pithawalla ◽  
M. Samy El-Shall ◽  
J. A. Carlisle
Keyword(s):  
Quantum Confinement ◽  
Blue Shift ◽  
Laser Vaporization ◽  
Photoluminescence Properties ◽  
Bonding Structure ◽  
Quantum Size ◽  
Si Nanocrystals ◽  
Crystalline Core ◽  
Si Nanoparticles ◽  
Significant Blue Shift

Web-like aggregates of coalesced Si nanocrystals produced by a laser vaporization-controlled condensation technique show luminescence properties that are similar to those of porous Si. The results are consistent with a quantum confinement mechanism as the source of the red photoluminescence (PL) in this system. The oxidized Si nanoparticles do not exhibit the red PL that is characteristic of the surface-oxidized Si nanocrystals. The nanoparticles are allowed to oxidize slowly, and the PL is measured as a function of the exposure time in air. A significant blue shift in the red PL peak is observed as a result of the slow oxidation process. The dependence of quantum size effects on the bonding structure is established by correlating the PL data with the photon-yield electronic structure measurements made at the Advanced Light Source. The results indicate that as the nanoparticles oxidize, the radius of the crystalline core decreases in size, which gives rise to a larger bandgap and consequently to the observed blue-shift in the PL band. The correlation between the PL, SXF, and NEXAFS results provides further support for the quantum confinement mechanism as the origin of the visible PL in Si nanocrystals.

Study on the single crystal growth of concentration gradient Ce:YAP rod and the dopant concentration dependence on the scintillation properties

2010 ◽  
Vol 45 (3-6) ◽  
pp. 453-456 ◽  
Author(s):  
Akihiro Fukabori ◽  
Takayuki Yanagida ◽  
Federico Moretti ◽  
Yuui Yokota ◽  
Rayko Shimura ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Concentration Dependence ◽  
Concentration Gradient ◽  
Dopant Concentration ◽  
Single Crystal Growth

scholarly journals Formation of Si nanocrystals in ion implanted Si-SiO2structures by MeV electron irradiation

2012 ◽  
Vol 356 ◽  
pp. 012005 ◽  
Author(s):  
S Kaschieva ◽  
A Gushterov ◽  
Ch Angelov ◽  
S N Dmitriev
Keyword(s):  
Electron Irradiation ◽  
Si Nanocrystals ◽  
Ion Implanted

scholarly journals Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities

2004 ◽  
Vol 85 (7) ◽  
pp. 1158-1160 ◽  
Author(s):  
Minoru Fujii ◽  
Yasuhiro Yamaguchi ◽  
Yuji Takase ◽  
Keiichi Ninomiya ◽  
Shinji Hayashi
Keyword(s):  
Photoluminescence Properties ◽  
Si Nanocrystals ◽  
P Type
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