scholarly journals Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities

2004 ◽  
Vol 85 (7) ◽  
pp. 1158-1160 ◽  
Author(s):  
Minoru Fujii ◽  
Yasuhiro Yamaguchi ◽  
Yuji Takase ◽  
Keiichi Ninomiya ◽  
Shinji Hayashi
Keyword(s):  
Photoluminescence Properties ◽  
Si Nanocrystals ◽  
P Type

Photoluminescence from n-(p-) type impurity doped Si nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
Minoru Fujii ◽  
Atsushi Mimura ◽  
Shinji Hayashi ◽  
Dmitri Kovalev ◽  
Frederick Koch
Keyword(s):  
Free Electrons ◽  
Electron Hole ◽  
P Concentration ◽  
Si Nanocrystals ◽  
Donor And Acceptor ◽  
Impurity Doped ◽  
Pl Intensity ◽  
B Doping ◽  
Three Body ◽  
P Type

AbstractEffects of impurity (P and B) doping on the photoluminescence (PL) properties of Si nanocrystals (nc-Si) in SiO2 thin films are studied. It is shown that with increasing P concentration, PL intensity first increases and then decreases. In the P concentration range where PL intensity increases, quenching of the defect-related PL is observed, suggesting that dangling-bond defects are passivated by P doping. On the other hand, in the range where PL intensity decreases, optical absorptiondue to the intravalley transitions of free electrons generated by P doping appears. The generation of free electrons andthe resultant three-body Auger recombination of electron-hole pairs is considered to be responsible for theobserved PL quenching. In the case of B doping, the behavior is much different. With increasing B concentration, PL intensity decreases monotonously. By combining the results obtained for P and B doped samples, theeffects of donor and acceptor impurities on the PL properties of nc-Si are discussed.

Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

2001 ◽  
Vol 45 (8) ◽  
pp. 1487-1494 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
Takayuki Hama ◽  
David E Hole ◽  
Ian W Boyd
Keyword(s):  
Ion Implantation ◽  
Photoluminescence Properties ◽  
Si Nanocrystals

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Effect of atmospheric oxidation on the electronic and photoluminescence properties of silicon nanocrystal

2000 ◽  
Vol 72 (1-2) ◽  
pp. 245-255 ◽  
Author(s):  
I. N. Germanenko ◽  
M. Dongol ◽  
Y. B. Pithawalla ◽  
M. Samy El-Shall ◽  
J. A. Carlisle
Keyword(s):  
Quantum Confinement ◽  
Blue Shift ◽  
Laser Vaporization ◽  
Photoluminescence Properties ◽  
Bonding Structure ◽  
Quantum Size ◽  
Si Nanocrystals ◽  
Crystalline Core ◽  
Si Nanoparticles ◽  
Significant Blue Shift

Web-like aggregates of coalesced Si nanocrystals produced by a laser vaporization-controlled condensation technique show luminescence properties that are similar to those of porous Si. The results are consistent with a quantum confinement mechanism as the source of the red photoluminescence (PL) in this system. The oxidized Si nanoparticles do not exhibit the red PL that is characteristic of the surface-oxidized Si nanocrystals. The nanoparticles are allowed to oxidize slowly, and the PL is measured as a function of the exposure time in air. A significant blue shift in the red PL peak is observed as a result of the slow oxidation process. The dependence of quantum size effects on the bonding structure is established by correlating the PL data with the photon-yield electronic structure measurements made at the Advanced Light Source. The results indicate that as the nanoparticles oxidize, the radius of the crystalline core decreases in size, which gives rise to a larger bandgap and consequently to the observed blue-shift in the PL band. The correlation between the PL, SXF, and NEXAFS results provides further support for the quantum confinement mechanism as the origin of the visible PL in Si nanocrystals.

EFFECT OF CHLORINATION ON PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON

2007 ◽  
Vol 06 (01) ◽  
pp. 17-22
Author(s):  
B. NATARAJAN ◽  
V. RAMAKRISHNAN ◽  
V. VASU ◽  
S. RAMAMURTHY
Keyword(s):  
Porous Silicon ◽  
Analytical Solution ◽  
Significant Role ◽  
Simulation Study ◽  
Surface Passivation ◽  
Photoluminescence Properties ◽  
Emission Efficiency ◽  
Capacitance Method ◽  
P Type ◽  
Effect Of Surface

The surface passivation of porous silicon plays a significant role in emission efficiency of the material. Photoluminescence (PL) studies were carried out for p-type porous silicon and chlorinated porous silicon to understand the effect of surface passivation on porous silicon. Visible photoluminescence was observed at 625 nm for both porous silicon and chlorinated porous silicon. The whole sample exhibits a PL band at red region and intensity decreased in chlorinated porous silicon. This paper presents an analytical solution that covers contributions from the components of silicon tetra chloride interface, silicon backbone, and voids using a serial–parallel capacitance method. Simulation study indicates that there is a good correlation between theory and observed PL.

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