Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study

1998 ◽  
Vol 73 (18) ◽  
pp. 2603-2605 ◽  
Author(s):  
V. I. Klimov ◽  
Ch. J. Schwarz ◽  
D. W. McBranch ◽  
C. W. White
2016 ◽  
Vol 18 (39) ◽  
pp. 27090-27101 ◽  
Author(s):  
Piotr Piatkowski ◽  
Boiko Cohen ◽  
Samrana Kazim ◽  
Shahzada Ahmad ◽  
Abderrazzak Douhal

The fluence dependent charge carrier relaxation dynamics in a FAPbI3 polycrystalline thin film were measured using femtosecond transient absorption and terahertz spectroscopies.


RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83969-83975 ◽  
Author(s):  
Palak Dugar ◽  
Mahesh Kumar ◽  
Shibin Krishna T. C. ◽  
Neha Aggarwal ◽  
Govind Gupta

Carrier relaxation dynamics through the defect levels in an epitaxial GaN/AlN/Si have been analysed on the femto–picosecond timescale, using ultrafast-transient absorption spectroscopy.


Author(s):  
Allan Bildé ◽  
Kipras Redeckas ◽  
Andrius Melninkaitis ◽  
Mikas Vengris ◽  
S Guizard

2006 ◽  
Vol 67 (1-3) ◽  
pp. 525-528 ◽  
Author(s):  
P. Guptasarma ◽  
M.S. Williamsen ◽  
B.K. Sarma ◽  
A. Suslov ◽  
M.L. Schneider ◽  
...  

2001 ◽  
Vol 30 (5) ◽  
pp. 448-452 ◽  
Author(s):  
Takeshi Ota ◽  
Yasuhiro Murase ◽  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Chikara Watatani ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document