scholarly journals Transforming a surface state of a topological insulator by a Bi capping layer

2014 ◽  
Vol 90 (23) ◽  
Author(s):  
Han Woong Yeom ◽  
Sung Hwan Kim ◽  
Woo Jong Shin ◽  
Kyung-Hwan Jin ◽  
Joonbum Park ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Surface State ◽  
Capping Layer

scholarly journals Enhanced surface state protection and band gap in the topological insulator PbBi4Te4S3

2018 ◽  
Vol 2 (10) ◽  
Author(s):  
K. Sumida ◽  
T. Natsumeda ◽  
K. Miyamoto ◽  
I. V. Silkin ◽  
K. Kuroda ◽  
...  
Keyword(s):  
Band Gap ◽  
Topological Insulator ◽  
Surface State ◽  
Enhanced Surface ◽  
State Protection

Controlled removal of amorphous Se capping layer from a topological insulator

2014 ◽  
Vol 105 (24) ◽  
pp. 241605 ◽  
Author(s):  
Kumar Virwani ◽  
Sara E. Harrison ◽  
Aakash Pushp ◽  
Teya Topuria ◽  
Eugene Delenia ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Capping Layer

scholarly journals Termination switching of antiferromagnetic proximity effect in topological insulator

2020 ◽  
Vol 6 (33) ◽  
pp. eaaz8463
Author(s):  
Chao-Yao Yang ◽  
Lei Pan ◽  
Alexander J. Grutter ◽  
Haiying Wang ◽  
Xiaoyu Che ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Topological Insulator ◽  
Surface State ◽  
Proximity Effect ◽  
Surface States ◽  
Double Exchange ◽  
Exchange Interactions ◽  
Stacking Order ◽  
Bst Films ◽  
Magnetic Proximity Effect

This work reports the ferromagnetism of topological insulator, (Bi,Sb)2Te3 (BST), with a Curie temperature of approximately 120 K induced by magnetic proximity effect (MPE) of an antiferromagnetic CrSe. The MPE was shown to be highly dependent on the stacking order of the heterostructure, as well as the interface symmetry: Growing CrSe on top of BST results in induced ferromagnetism, while growing BST on CrSe yielded no evidence of an MPE. Cr-termination in the former case leads to double-exchange interactions between Cr3+ surface states and Cr2+ bulk states. This Cr3+-Cr2+ exchange stabilizes the ferromagnetic order localized at the interface and magnetically polarizes the BST Sb band. In contrast, Se-termination at the CrSe/BST interface yields no detectable MPE. These results directly confirm the MPE in BST films and provide critical insights into the sensitivity of the surface state.

Surface state dominated transport in topological insulator Bi2Te3 nanowires

2013 ◽  
Vol 103 (19) ◽  
pp. 193107 ◽  
Author(s):  
Bacel Hamdou ◽  
Johannes Gooth ◽  
August Dorn ◽  
Eckhard Pippel ◽  
Kornelius Nielsch
Keyword(s):  
Topological Insulator ◽  
Surface State

scholarly journals Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO3

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Jihwey Park ◽  
Yeong-Ah Soh ◽  
Gabriel Aeppli ◽  
Xiao Feng ◽  
Yunbo Ou ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Transport Properties ◽  
Topological Insulator ◽  
Topological Insulators ◽  
Surface States ◽  
Crystal Quality ◽  
X Rays ◽  
Capping Layer ◽  
Subtle Effect

Abstract Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) films grown on SrTiO3 (1 1 1) substrates with and without a Te capping layer. We find that both the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.

scholarly journals Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
I. P. Rusinov ◽  
T. V. Menshchikova ◽  
A. Isaeva ◽  
S. V. Eremeev ◽  
Yu. M. Koroteev ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Surface State ◽  
Mirror Symmetry ◽  
Symmetry Protected
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