scholarly journals Termination switching of antiferromagnetic proximity effect in topological insulator

2020 ◽  
Vol 6 (33) ◽  
pp. eaaz8463
Author(s):  
Chao-Yao Yang ◽  
Lei Pan ◽  
Alexander J. Grutter ◽  
Haiying Wang ◽  
Xiaoyu Che ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Topological Insulator ◽  
Surface State ◽  
Proximity Effect ◽  
Surface States ◽  
Double Exchange ◽  
Exchange Interactions ◽  
Stacking Order ◽  
Bst Films ◽  
Magnetic Proximity Effect

This work reports the ferromagnetism of topological insulator, (Bi,Sb)2Te3 (BST), with a Curie temperature of approximately 120 K induced by magnetic proximity effect (MPE) of an antiferromagnetic CrSe. The MPE was shown to be highly dependent on the stacking order of the heterostructure, as well as the interface symmetry: Growing CrSe on top of BST results in induced ferromagnetism, while growing BST on CrSe yielded no evidence of an MPE. Cr-termination in the former case leads to double-exchange interactions between Cr3+ surface states and Cr2+ bulk states. This Cr3+-Cr2+ exchange stabilizes the ferromagnetic order localized at the interface and magnetically polarizes the BST Sb band. In contrast, Se-termination at the CrSe/BST interface yields no detectable MPE. These results directly confirm the MPE in BST films and provide critical insights into the sensitivity of the surface state.

Magnetic proximity effect in the topological insulator BiSbTeSe2

2015 ◽  
Vol 9 (3) ◽  
pp. 175-179 ◽  
Author(s):  
Karan Banerjee ◽  
Jean Besbas ◽  
Peng Ren ◽  
Lan Wang ◽  
Hyunsoo Yang
Keyword(s):  
Topological Insulator ◽  
Proximity Effect ◽  
Magnetic Proximity Effect

Erratum: Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface [Chin. Phys. Lett. 38 (2021) 057303]

2021 ◽  
Vol 38 (10) ◽  
pp. 109901
Author(s):  
Yuxin Liu ◽  
Xuefan Niu ◽  
Rencong Zhang ◽  
Qinghua Zhang ◽  
Jing Teng ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Proximity Effect ◽  
Sharp Interface ◽  
Chinese Academy Of Sciences ◽  
Academy Of Sciences ◽  
Magnetic Proximity Effect

We should add the following acknowledge: Jing Teng thanks the support from the Youth Innovation Promotion Association Project, Chinese Academy of Sciences.

scholarly journals Magnetic proximity effect in the three-dimensional topological insulator/ferromagnetic insulator heterostructure

2013 ◽  
Vol 88 (22) ◽  
Author(s):  
V. N. Men'shov ◽  
V. V. Tugushev ◽  
S. V. Eremeev ◽  
P. M. Echenique ◽  
E. V. Chulkov
Keyword(s):  
Topological Insulator ◽  
Proximity Effect ◽  
Three Dimensional ◽  
Magnetic Proximity Effect

scholarly journals Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

2017 ◽  
Vol 96 (20) ◽  
Author(s):  
Mingda Li ◽  
Qichen Song ◽  
Weiwei Zhao ◽  
Joseph A. Garlow ◽  
Te-Huan Liu ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Proximity Effect ◽  
Dirac Electron ◽  
Magnetic Insulator ◽  
Magnetic Proximity Effect

scholarly journals Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

2021 ◽  
Vol 38 (5) ◽  
pp. 057303
Author(s):  
Yuxin Liu ◽  
Xuefan Niu ◽  
Rencong Zhang ◽  
Qinghua Zhang ◽  
Jing Teng ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Proximity Effect ◽  
Sharp Interface ◽  
Magnetic Proximity Effect

scholarly journals On Strong f-Electron Localization Effect in a Topological Kondo Insulator

Symmetry ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 2245
Author(s):  
Udai Prakash Tyagi ◽  
Kakoli Bera ◽  
Partha Goswami
Keyword(s):  
Topological Insulator ◽  
Surface State ◽  
Mean Field ◽  
Surface States ◽  
Pictorial Representation ◽  
Electron Localization ◽  
Surface Band ◽  
Kondo Insulator ◽  
Localization Effect ◽  
Generic System

We study a strong f-electron localization effect on the surface state of a generic topological Kondo insulator (TKI) system by performing a mean-field theoretic (MFT) calculation within the framework of the periodic Anderson model (PAM) using the slave boson technique. The surface metallicity, together with bulk insulation, requires this type of localization. A key distinction between surface states in a conventional insulator and a topological insulator is that, along a course joining two time-reversal invariant momenta (TRIM) in the same BZ, there will be an intersection of these surface states, an even/odd number of times, with the Fermi energy inside the spectral gap. For an even (odd) number of surface state crossings, the surface states are topologically trivial (non-trivial). The symmetry consideration and the pictorial representation of the surface band structure obtained here show an odd number of crossings, leading to the conclusion that, at least within the PAM framework, the generic system is a strong topological insulator.

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