Slow intraband relaxation and localization of photogenerated carriers inCuIn1−xGaxSe2thin films: Evidence for the existence of long-lived high-energy carriers

2014 ◽  
Vol 89 (19) ◽  
Author(s):  
Makoto Okano ◽  
Yutaro Takabayashi ◽  
Takeaki Sakurai ◽  
Katsuhiro Akimoto ◽  
Hajime Shibata ◽  
...  
Keyword(s):  
High Energy ◽  
Energy Carriers ◽  
Intraband Relaxation

scholarly journals Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures

2015 ◽  
Vol 118 (3) ◽  
pp. 033103 ◽  
Author(s):  
A. Nirschl ◽  
M. Binder ◽  
M. Schmid ◽  
M. M. Karow ◽  
I. Pietzonka ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Energy ◽  
Energy Carriers ◽  
Quantum Well Structures

scholarly journals Limiting Solar Cell Heat-Up by Quantizing High Energy Carriers

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
L. Devarakonda ◽  
S. Mil'shtein
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Solar Radiation ◽  
Quantum Wells ◽  
High Energy ◽  
Absorption Coefficients ◽  
Energy Carriers ◽  
Continuity Equations ◽  
Heat Exchanges ◽  
Heating Up

Under solar radiation the efficiency of solar cells decreases as a result of heating up by short wavelengths photons. To minimize loss of efficiency with increasing temperatures, we designed a heterostructure AlGaAs/AlGaAs/GaAs cascaded p-i-n solar cells with 30 Å wide quantum wells and 10 Å wide barriers in p and i regions. Our modeling demonstrated that quantizing high energy carriers in the superlattice prevents scattering of excessive electron energies, thus decreasing the temperature rise per unit of time by a factor of 2. The modeling based on continuity equations included integration of absorption coefficients for various wavelengths and summarizes all thermodynamic heat exchanges in the designed solar cell.

The recognition of bioenergetic processes

1975 ◽  
Vol 189 (1095) ◽  
pp. 235-248
Keyword(s):  
Chemical Bond ◽  
Bond Energy ◽  
Energy Supply ◽  
High Energy ◽  
Bacterial Photosynthesis ◽  
Energy Carrier ◽  
Purine Derivatives ◽  
Energy Carriers ◽  
Starting Point ◽  
Plant Photosynthesis

The basis of bioenergetics on Earth is briefly analysed. There are four types of energy supply (1) heterotrophy, (2) chemi-autotrophy, (3) bacterial photosynthesis and (4) plant photosynthesis. The main energy carrier is ATP. There are in addition many other classes of high-energy compounds such as amidine-, acyl-, carbamyl-, and enol-phosphates, acylthioesters, acyl-imidazoles, and onium compounds. Still other compounds can be envisaged. Taking these processes as a starting point, several possible modifications are suggested. Bioenergetics now centres around radiant and chemical bond energy. In other conditions other forms of energy for life processes are possible (electrical, mechanical, thermal, etc.). Guanine is a serious alternative to adenine, and, perhaps less likely but not negligible, other stable purine-derivatives. Several other compounds, such as porphin, isoalloxazines, etc., are very stable and are excellent candidates as alternate energy carriers. Free pyrophosphate and metaphosphate are alternatives to ATP.

Manifestation of inelastic scattering of free high-energy carriers in heavily doped CdxHg1−xTe

1991 ◽  
Vol 31 (3) ◽  
pp. 271-277
Author(s):  
A.E. Belyaev ◽  
Z.A. Demidenko ◽  
N.V. Shevchenko
Keyword(s):  
Inelastic Scattering ◽  
High Energy ◽  
Energy Carriers ◽  
Heavily Doped

The E-ring: interactions with plasma and implications for its evolution

1984 ◽  
Vol 75 ◽  
pp. 599-602
Author(s):  
T.V. Johnson ◽  
G.E. Morfill ◽  
E. Grun
Keyword(s):  
Time Scale ◽  
Particle Density ◽  
High Energy ◽  
Particle Removal ◽  
Density Region ◽  
Drag Forces ◽  
Orbit Evolution ◽  
History Of ◽  
Ring Particle ◽  
Ring Material

A number of lines of evidence suggest that the particles making up the E-ring are small, on the order of a few microns or less in size (Terrile and Tokunaga, 1980, BAAS; Pang et al., 1982 Saturn meeting; Tucson, AZ). This suggests that a variety of electromagnetic and plasma affects may be important in considering the history of such particles. We have shown (Morfill et al., 1982, J. Geophys. Res., in press) that plasma drags forces from the corotating plasma will rapidly evolve E-ring particle orbits to increasing distance from Saturn until a point is reached where radiation drag forces acting to decrease orbital radius balance this outward acceleration. This occurs at approximately Rhea's orbit, although the exact value is subject to many uncertainties. The time scale for plasma drag to move particles from Enceladus' orbit to the outer E-ring is ~104yr. A variety of effects also act to remove particles, primarily sputtering by both high energy charged particles (Cheng et al., 1982, J. Geophys. Res., in press) and corotating plasma (Morfill et al., 1982). The time scale for sputtering away one micron particles is also short, 102 - 10 yrs. Thus the detailed particle density profile in the E-ring is set by a competition between orbit evolution and particle removal. The high density region near Enceladus' orbit may result from the sputtering yeild of corotating ions being less than unity at this radius (e.g. Eviatar et al., 1982, Saturn meeting). In any case, an active source of E-ring material is required if the feature is not very ephemeral - Enceladus itself, with its geologically recent surface, appears still to be the best candidate for the ultimate source of E-ring material.

Analysis of electron-diffraction intensity profiles using a photodiode-array detection system

1983 ◽  
Vol 41 ◽  
pp. 322-323
Author(s):  
J. B. Warren
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Detection System ◽  
High Energy ◽  
Photographic Emulsion ◽  
Diffraction Intensity ◽  
Silicon Photodiode ◽  
Photodiode Array Detection ◽  
Analog To Digital ◽  
Photodiode Array

Electron diffraction intensity profiles have been used extensively in studies of polycrystalline and amorphous thin films. In previous work, diffraction intensity profiles were quantitized either by mechanically scanning the photographic emulsion with a densitometer or by using deflection coils to scan the diffraction pattern over a stationary detector. Such methods tend to be slow, and the intensities must still be converted from analog to digital form for quantitative analysis. The Instrumentation Division at Brookhaven has designed and constructed a electron diffractometer, based on a silicon photodiode array, that overcomes these disadvantages. The instrument is compact (Fig. 1), can be used with any unmodified electron microscope, and acquires the data in a form immediately accessible by microcomputer.Major components include a RETICON 1024 element photodiode array for the de tector, an Analog Devices MAS-1202 analog digital converter and a Digital Equipment LSI 11/2 microcomputer. The photodiode array cannot detect high energy electrons without damage so an f/1.4 lens is used to focus the phosphor screen image of the diffraction pattern on to the photodiode array.

Observation of Superlattice Dislocations on Cube Planes in Ni3Al

1973 ◽  
Vol 31 ◽  
pp. 174-175 ◽  
Author(s):  
J. M. Oblak ◽  
W. H. Rand
Keyword(s):  
Nearest Neighbor ◽  
Antiphase Boundary ◽  
Nearest Neighbors ◽  
High Energy ◽  
Cross Slip ◽  
Octahedral Plane ◽  
Trapping Mechanism ◽  
Slip Traces

The energy of an a/2 <110> shear antiphase. boundary in the Ll2 expected to be at a minimum on {100} cube planes because here strue ture is there is no violation of nearest-neighbor order. The latter however does involve the disruption of second nearest neighbors. It has been suggested that cross slip of paired a/2 <110> dislocations from octahedral onto cube planes is an important dislocation trapping mechanism in Ni3Al; furthermore, slip traces consistent with cube slip are observed above 920°K.Due to the high energy of the {111} antiphase boundary (> 200 mJ/m2), paired a/2 <110> dislocations are tightly constricted on the octahedral plane and cannot be individually resolved.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Void-Lattice Formation in Natural Fluorite by Electron Irradiation

1976 ◽  
Vol 34 ◽  
pp. 614-615 ◽  
Author(s):  
L.E. Murr
Keyword(s):  
Electron Microscope ◽  
Electron Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
Stoichiometric Ratio ◽  
Direct Observations ◽  
Transmission Electron ◽  
Anion Vacancies ◽  
Cation And Anion Vacancies ◽  
Lattice Formation

The production of void lattices in metals as a result of displacement damage associated with high energy and heavy ion bombardment is now well documented. More recently, Murr has shown that a void lattice can be developed in natural (colored) fluorites observed in the transmission electron microscope. These were the first observations of a void lattice in an irradiated nonmetal, and the first, direct observations of color-center aggregates. Clinard, et al. have also recently observed a void lattice (described as a high density of aligned "pores") in neutron irradiated Al2O3 and Y2O3. In this latter work, itwas pointed out that in order that a cavity be formed,a near-stoichiometric ratio of cation and anion vacancies must aggregate. It was reasoned that two other alternatives to explain the pores were cation metal colloids and highpressure anion gas bubbles.Evans has proposed that void lattices result from the presence of a pre-existing impurity lattice, and predicted that the formation of a void lattice should restrict swelling in irradiated materials because it represents a state of saturation.

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