scholarly journals Longer-range lattice anisotropy strongly competing with spin-orbit interactions in pyrochlore iridates

2014 ◽  
Vol 89 (11) ◽  
Author(s):  
L. Hozoi ◽  
H. Gretarsson ◽  
J. P. Clancy ◽  
B.-G. Jeon ◽  
B. Lee ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
Lattice Anisotropy

Electronic Structure of Low-Dimensional 4d5 Oxides: Interplay of Ligand Distortions, Overall Lattice Anisotropy, and Spin–Orbit Interactions

2014 ◽  
Vol 53 (10) ◽  
pp. 4833-4839 ◽  
Author(s):  
Vamshi M. Katukuri ◽  
Karla Roszeitis ◽  
Viktor Yushankhai ◽  
Alexander Mitrushchenkov ◽  
Hermann Stoll ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Spin Orbit ◽  
Low Dimensional ◽  
Spin Orbit Interactions ◽  
Lattice Anisotropy

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Intersystem crossing processes in the 2CzPN emitter: a DFT/MRCI study including vibrational spin–orbit interactions

2021 ◽  
Vol 23 (5) ◽  
pp. 3668-3678
Author(s):  
Angela Rodriguez-Serrano ◽  
Fabian Dinkelbach ◽  
Christel M. Marian
Keyword(s):  
Quantum Chemical Calculations ◽  
Quantum Chemical ◽  
Intersystem Crossing ◽  
Spin Orbit ◽  
Spin Orbit Interactions

Multireference quantum chemical calculations were performed in order to investigate the (reverse) intersystem crossing ((R)ISC) mechanisms of 4,5-di(9H-carbazol-9-yl)-phthalonitrile (2CzPN).

Superconductors with spin–orbit interactions

2016 ◽  
Vol 30 (25) ◽  
pp. 1650183 ◽  
Author(s):  
Yu. N. Ovchinnikov
Keyword(s):  
Magnetic Field ◽  
Superconducting Films ◽  
Critical Magnetic Field ◽  
Spin Orbit ◽  
Zero Temperature ◽  
Interband Pairing ◽  
Two Parameters ◽  
Spin Orbit Interactions ◽  
Parameter Values ◽  
Thin Superconducting Films

The effect of spin-orbit (SO) interaction on the formation of the critical states in thin superconducting films in magnetic field oriented along the film is investigated. Hereby, the case of interband pairing is considered. It was found that eight branches exist in the plane of two parameters [Formula: see text] determined by the value of magnetic field and SO interaction. Six modes leads to inhomogeneous states with different values of the impulse [Formula: see text]. Each state is doubly degenerate over direction of impulse [Formula: see text]. The parameter values at critical point are found for all eight branches in explicit form for zero temperature. The optimal two branches are estimated, corresponding to largest critical magnetic field value for given SO interaction.

Coupled Spin-Orbit Interactions in Flying Qubit Architectures

2021 ◽  
Author(s):  
Gaurab Panda ◽  
Ryan S. Aridi ◽  
Haozhi Dong ◽  
Virginia M. Ayres ◽  
Harry C. Shaw
Keyword(s):  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
Flying Qubit
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