scholarly journals Anisotropic spin transport in two-terminal mesoscopic rings: Rashba and Dresselhaus spin-orbit interactions

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Miao Wang ◽  
Kai Chang
Keyword(s):  
Spin Transport ◽  
Spin Orbit ◽  
Spin Orbit Interactions

SPIN INTERFERENCE CAUSED BY SPIN-ORBIT INTERACTION IN NON-MAGNETIC HETEROSTRUCTURES

2010 ◽  
Vol 24 (17) ◽  
pp. 1839-1845 ◽  
Author(s):  
YONG-MEI ZHANG ◽  
JIN-DOU QIU ◽  
CHUN ZHANG ◽  
DONG-SHENG HU
Keyword(s):  
Quantum Interference ◽  
Spin Transport ◽  
Quantum Information Processing ◽  
Angle Of Incidence ◽  
Spin Orbit ◽  
Light Passing ◽  
Magnetic Heterostructures ◽  
Spin Orbit Interactions ◽  
Polarization Of Light ◽  
Shed Light

We study spin transport properties in non-magnetic heterostructures in the presence of different spin-orbit interactions. For an unpolarized beam with zero angle of incidence, the transmitted spin-up and spin-down electrons will propagate in the same direction with similar amplitudes and different phases. The two beams will interfere with each other after passing through a certain distance of spin-orbit region. This effect just resembles the interference of polarization of light passing through wave plate. This quantum interference will shed light on quantum information processing and quantum computation.

REEXAMINATION OF SPIN TRANSPORT THROUGH A DOUBLE-δ MAGNETIC BARRIER WITH SPIN-ORBIT INTERACTIONS

2009 ◽  
Vol 23 (30) ◽  
pp. 3631-3642
Author(s):  
CAIHUA BI ◽  
FENG ZHAI
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Spin Polarization ◽  
Energy Region ◽  
Spin Transport ◽  
Inhomogeneous Magnetic Field ◽  
Pure Spin ◽  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
The Magnetic Field

We revisit the properties of spin transport through a semiconductor 2DEG system subjected to the modulation of both a ferromagnetic metal (FM) stripe on top and the Rashba and Dresselhaus spin-orbit interactions (SOIs). The FM stripe has a magnetization along the transporting direction and generates an inhomogeneous magnetic field in the 2DEG plane which is taken as a double-δ shape. It is found that the spin polarization of this system generated from a spin-unpolarized injection can be remarkable only within a low Fermi energy region and is not more than 30% for the parameters available in current experiments. In this energy region, both the magnitude and the orientation of the spin polarization can be tuned by the Rashba strength, the Dresselhaus strength, and the magnetic field strength. The magnetization reversal of the FM stripe cannot result in a change of the conductance, but can rotate the orientation of the spin polarization. The results are in contrast to those in [ J. Phys.: Condens. Matter15 (2003) L31] where a pure spin state for incident electrons is artificially assumed.

Acoustically Induced Spin-Orbit Interactions Revealed by Two-Dimensional Imaging of Spin Transport in GaAs

2011 ◽  
Vol 106 (21) ◽  
Author(s):  
H. Sanada ◽  
T. Sogawa ◽  
H. Gotoh ◽  
K. Onomitsu ◽  
M. Kohda ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Spin Orbit Interactions

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Intersystem crossing processes in the 2CzPN emitter: a DFT/MRCI study including vibrational spin–orbit interactions

2021 ◽  
Vol 23 (5) ◽  
pp. 3668-3678
Author(s):  
Angela Rodriguez-Serrano ◽  
Fabian Dinkelbach ◽  
Christel M. Marian
Keyword(s):  
Quantum Chemical Calculations ◽  
Quantum Chemical ◽  
Intersystem Crossing ◽  
Spin Orbit ◽  
Spin Orbit Interactions

Multireference quantum chemical calculations were performed in order to investigate the (reverse) intersystem crossing ((R)ISC) mechanisms of 4,5-di(9H-carbazol-9-yl)-phthalonitrile (2CzPN).

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