Electronic Structure of Low-Dimensional 4d5 Oxides: Interplay of Ligand Distortions, Overall Lattice Anisotropy, and Spin–Orbit Interactions

2014 ◽  
Vol 53 (10) ◽  
pp. 4833-4839 ◽  
Author(s):  
Vamshi M. Katukuri ◽  
Karla Roszeitis ◽  
Viktor Yushankhai ◽  
Alexander Mitrushchenkov ◽  
Hermann Stoll ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Spin Orbit ◽  
Low Dimensional ◽  
Spin Orbit Interactions ◽  
Lattice Anisotropy

scholarly journals Longer-range lattice anisotropy strongly competing with spin-orbit interactions in pyrochlore iridates

2014 ◽  
Vol 89 (11) ◽  
Author(s):  
L. Hozoi ◽  
H. Gretarsson ◽  
J. P. Clancy ◽  
B.-G. Jeon ◽  
B. Lee ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
Lattice Anisotropy

scholarly journals Spin-orbit interactions in electronic structure quantum Monte Carlo methods

2016 ◽  
Vol 93 (4) ◽  
Author(s):  
Cody A. Melton ◽  
Minyi Zhu ◽  
Shi Guo ◽  
Alberto Ambrosetti ◽  
Francesco Pederiva ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electronic Structure ◽  
Monte Carlo Methods ◽  
Quantum Monte Carlo ◽  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
Quantum Monte Carlo Methods

Electronic Structure of Biaxially-Strained Wurtzite Crystals GaN and AlN

1996 ◽  
Vol 449 ◽  
Author(s):  
J. A. Majewski ◽  
M. Städele ◽  
P. Vogl
Keyword(s):  
Experimental Data ◽  
Electronic Structure ◽  
Effective Mass ◽  
Valence Band ◽  
Crystal Field ◽  
First Principles ◽  
Local Density ◽  
Pseudopotential Method ◽  
Spin Orbit ◽  
Spin Orbit Interactions

ABSTRACTWe present first-principles studies of the effect of biaxial (OOOl)-strain on the electronic structure of wurtzite GaN, and A1N. We provide accurate predictions of the valence band splittings as a function of strain, which may facilitate the interpretation of data from strained samples. The conduction and valence band effective mass tensors for A1N and GaN are also presented. The computed crystal-field and spin-orbit splittings in unstrained materials as well as the computed deformation potentials are in accord with available experimental data. We show that the numerically computed band energies can be excellently represented in terms of a 6-band k · p model. The present calculations are based on the first-principles pseudopotential method within the local-density formalism and include the spin-orbit interactions non-perturbatively.

scholarly journals Superconductivity in CaBi2

2016 ◽  
Vol 18 (31) ◽  
pp. 21737-21745 ◽  
Author(s):  
M. J. Winiarski ◽  
B. Wiendlocha ◽  
S. Gołąb ◽  
S. K. Kushwaha ◽  
P. Wiśniewski ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Critical Temperature ◽  
Single Crystals ◽  
Type I ◽  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
P Type

Type-I superconductivity is observed with critical temperature Tc = 2.0 K in self-flux-grown single crystals of CaBi2. Calculations show the importance of spin–orbit interactions on the electronic structure.

scholarly journals Important Roles of Te 5p and Ir 5d Spin–Orbit Interactions on the Multi-band Electronic Structure of Triangular Lattice Superconductor Ir1−xPtxTe2

2014 ◽  
Vol 83 (3) ◽  
pp. 033704 ◽  
Author(s):  
Daiki Ootsuki ◽  
Tatsuya Toriyama ◽  
Masakazu Kobayashi ◽  
Sunseng Pyon ◽  
Kazutaka Kudo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Triangular Lattice ◽  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
Multi Band

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Intersystem crossing processes in the 2CzPN emitter: a DFT/MRCI study including vibrational spin–orbit interactions

2021 ◽  
Vol 23 (5) ◽  
pp. 3668-3678
Author(s):  
Angela Rodriguez-Serrano ◽  
Fabian Dinkelbach ◽  
Christel M. Marian
Keyword(s):  
Quantum Chemical Calculations ◽  
Quantum Chemical ◽  
Intersystem Crossing ◽  
Spin Orbit ◽  
Spin Orbit Interactions

Multireference quantum chemical calculations were performed in order to investigate the (reverse) intersystem crossing ((R)ISC) mechanisms of 4,5-di(9H-carbazol-9-yl)-phthalonitrile (2CzPN).

Sign in / Sign up

Export Citation Format

Share Document