High-energy collective electronic excitations in free-standing single-layer graphene

2013 ◽  
Vol 88 (7) ◽  
Author(s):  
P. Wachsmuth ◽  
R. Hambach ◽  
M. K. Kinyanjui ◽  
M. Guzzo ◽  
G. Benner ◽  
...  
Keyword(s):  
Single Layer ◽  
High Energy ◽  
Single Layer Graphene ◽  
Electronic Excitations ◽  
Free Standing ◽  
Layer Graphene

scholarly journals Fine Spin-Dependent Splitting of Electronic Excitations and Their Dispersion in Single-Layer Graphene and Graphite

2020 ◽  
Vol 65 (7) ◽  
pp. 625
Author(s):  
V. O. Gubanov ◽  
A. P. Naumenko ◽  
I. S. Dotsenko ◽  
M. M. Sabov ◽  
D. V. Gryn ◽  
...  
Keyword(s):  
Single Layer ◽  
Electronic Energy ◽  
Single Layer Graphene ◽  
Metal Chalcogenides ◽  
High Symmetry ◽  
Electronic Excitations ◽  
Layer Graphene ◽  
Carbon Structures ◽  
Projective Representations ◽  
Crystalline Graphite

The dispersion dependences of electronic excitations in single-layer graphene and crystalline graphite have been studied taking the electron spin into consideration. Compatibility conditions for two-valued irreducible projective representations characterizing the symmetry of spinor excitations in the above structures and the distributions of spinor quantum states over projective classes and irreducible projective representations at all high-symmetry points in the corresponding Brillouin zones are determined for the first time. The principal existence of the spin-dependent splitting (or merging) of the electronic energy states, in particular, the electronic п-bands at the Dirac points, is established. The magnitude of spin-dependent splitting can be significant, e.g., for the transition-metal chalcogenides belonging to the same spatial symmetry group as crystalline graphite. However, because of the weak spin-orbit interaction for carbon atoms, it turns out small for all carbon structures including single-layer graphene and crystalline graphite.

scholarly journals In-situ measurement of the heat transport in defect- engineered free-standing single-layer graphene

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Haidong Wang ◽  
Kosaku Kurata ◽  
Takanobu Fukunaga ◽  
Hiroshi Takamatsu ◽  
Xing Zhang ◽  
...  
Keyword(s):  
Heat Transport ◽  
Single Layer ◽  
In Situ Measurement ◽  
Single Layer Graphene ◽  
Free Standing ◽  
Layer Graphene

scholarly journals Интеркаляционный синтез силицидов кобальта под графеном, выращенным на карбиде кремния

2020 ◽  
Vol 62 (3) ◽  
pp. 462
Author(s):  
Г.С. Гребенюк ◽  
И.А. Елисеев ◽  
С.П. Лебедев ◽  
Е.Ю. Лобанова ◽  
Д.А. Смирнов ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Single Layer ◽  
High Energy ◽  
Single Layer Graphene ◽  
High Energy Resolution ◽  
Kelvin Probe ◽  
Layer Graphene ◽  
Atomic Force ◽  
Cobalt Silicides

Abstract The process of formation of cobalt silicides near the graphene-silicon carbide interface by intercalation of single-layer graphene grown on the 4 H - and 6 H -SiC(0001) polytypes with cobalt and silicon is studied. The experiments were carried out in situ in ultrahigh vacuum. The analysis of the samples is performed by high-energy-resolution photoelectron spectroscopy using synchrotron radiation, low-energy electron diffraction, and also Raman spectroscopy, atomic-force and kelvin-probe microscopies. The thicknesses of the deposited cobalt and silicon layers is varied to 2 nm, and the sample temperature, from room temperature to 1000°C. Co and Si atoms deposited on heated samples is found to penetrate under graphene and are localized between the buffer layer and the substrate, which leads to a transformation of the buffer layer into additional graphene layer. It is shown that the result of intercalation of the system with cobalt and silicon is the formation under two-layer graphene of a Co–Si solid solution and silicide CoSi coated by the surface Co_3Si phase. It is shown that the thickness and the composition of the formed silicide films can be changed by varying the amount of the intercalated material and the order of their depositions.

scholarly journals Contact angle measurement of free-standing square-millimeter single-layer graphene

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Anna V. Prydatko ◽  
Liubov A. Belyaeva ◽  
Lin Jiang ◽  
Lia M. C. Lima ◽  
Grégory F. Schneider
Keyword(s):  
Contact Angle ◽  
Single Layer ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Single Layer Graphene ◽  
Free Standing ◽  
Layer Graphene

Experimental study on thermal conductivity of free-standing fluorinated single-layer graphene

2017 ◽  
Vol 111 (9) ◽  
pp. 093103 ◽  
Author(s):  
Masahiro Narasaki ◽  
Haidong Wang ◽  
Takashi Nishiyama ◽  
Tatsuya Ikuta ◽  
Koji Takahashi
Keyword(s):  
Thermal Conductivity ◽  
Experimental Study ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Free Standing ◽  
Layer Graphene

Effective fluorination of single-layer graphene by high-energy ion irradiation through a LiF overlayer

RSC Advances ◽  
2016 ◽  
Vol 6 (72) ◽  
pp. 68525-68529 ◽  
Author(s):  
Shiro Entani ◽  
Masaki Mizuguchi ◽  
Hideo Watanabe ◽  
Liubov Yu. Antipina ◽  
Pavel B. Sorokin ◽  
...  
Keyword(s):  
Chemical Method ◽  
Ion Irradiation ◽  
Single Layer ◽  
High Energy ◽  
Single Layer Graphene ◽  
Heteroatom Doping ◽  
Layer Graphene

A new non-chemical method for heteroatom doping into single-layer graphene was demonstrated by high-energy ion irradiation of the graphene-based heterostructure.

Growth of free-standing SnO nanostructures on single layer graphene

2019 ◽  
Vol 236 ◽  
pp. 324-328 ◽  
Author(s):  
Mee-Ree Kim ◽  
Imbok Lee ◽  
Keun Soo Kim ◽  
Ki-Chul Kim
Keyword(s):  
Single Layer ◽  
Single Layer Graphene ◽  
Free Standing ◽  
Layer Graphene

A simple method for fabricating free-standing large area fluorinated single-layer graphene with size-tunable nanopores

Carbon ◽  
2016 ◽  
Vol 99 ◽  
pp. 564-570 ◽  
Author(s):  
Haidong Wang ◽  
Kosaku Kurata ◽  
Takanobu Fukunaga ◽  
Hiroshi Takamatsu ◽  
Xing Zhang ◽  
...  
Keyword(s):  
Single Layer ◽  
Single Layer Graphene ◽  
Large Area ◽  
Free Standing ◽  
Simple Method ◽  
Layer Graphene

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

Sign in / Sign up

Export Citation Format

Share Document