Effective fluorination of single-layer graphene by high-energy ion irradiation through a LiF overlayer

RSC Advances ◽  
2016 ◽  
Vol 6 (72) ◽  
pp. 68525-68529 ◽  
Author(s):  
Shiro Entani ◽  
Masaki Mizuguchi ◽  
Hideo Watanabe ◽  
Liubov Yu. Antipina ◽  
Pavel B. Sorokin ◽  
...  
Keyword(s):  
Chemical Method ◽  
Ion Irradiation ◽  
Single Layer ◽  
High Energy ◽  
Single Layer Graphene ◽  
Heteroatom Doping ◽  
Layer Graphene

A new non-chemical method for heteroatom doping into single-layer graphene was demonstrated by high-energy ion irradiation of the graphene-based heterostructure.

Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

2018 ◽  
Vol 123 (16) ◽  
pp. 161533 ◽  
Author(s):  
Sunil Kumar ◽  
Ashish Kumar ◽  
Ambuj Tripathi ◽  
Chetna Tyagi ◽  
D. K. Avasthi
Keyword(s):  
Electronic Properties ◽  
Ion Irradiation ◽  
Single Layer ◽  
Heavy Ion ◽  
Single Layer Graphene ◽  
Swift Heavy Ion Irradiation ◽  
Layer Graphene ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

High-energy collective electronic excitations in free-standing single-layer graphene

2013 ◽  
Vol 88 (7) ◽  
Author(s):  
P. Wachsmuth ◽  
R. Hambach ◽  
M. K. Kinyanjui ◽  
M. Guzzo ◽  
G. Benner ◽  
...  
Keyword(s):  
Single Layer ◽  
High Energy ◽  
Single Layer Graphene ◽  
Electronic Excitations ◽  
Free Standing ◽  
Layer Graphene

Investigating change of properties in gallium ion irradiation patterned single-layer graphene

2016 ◽  
Vol 380 (42) ◽  
pp. 3514-3519 ◽  
Author(s):  
Quan Wang ◽  
Jinyao Dong ◽  
Bing Bai ◽  
Guoxin Xie
Keyword(s):  
Ion Irradiation ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

scholarly journals Интеркаляционный синтез силицидов кобальта под графеном, выращенным на карбиде кремния

2020 ◽  
Vol 62 (3) ◽  
pp. 462
Author(s):  
Г.С. Гребенюк ◽  
И.А. Елисеев ◽  
С.П. Лебедев ◽  
Е.Ю. Лобанова ◽  
Д.А. Смирнов ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Single Layer ◽  
High Energy ◽  
Single Layer Graphene ◽  
High Energy Resolution ◽  
Kelvin Probe ◽  
Layer Graphene ◽  
Atomic Force ◽  
Cobalt Silicides

Abstract The process of formation of cobalt silicides near the graphene-silicon carbide interface by intercalation of single-layer graphene grown on the 4 H - and 6 H -SiC(0001) polytypes with cobalt and silicon is studied. The experiments were carried out in situ in ultrahigh vacuum. The analysis of the samples is performed by high-energy-resolution photoelectron spectroscopy using synchrotron radiation, low-energy electron diffraction, and also Raman spectroscopy, atomic-force and kelvin-probe microscopies. The thicknesses of the deposited cobalt and silicon layers is varied to 2 nm, and the sample temperature, from room temperature to 1000°C. Co and Si atoms deposited on heated samples is found to penetrate under graphene and are localized between the buffer layer and the substrate, which leads to a transformation of the buffer layer into additional graphene layer. It is shown that the result of intercalation of the system with cobalt and silicon is the formation under two-layer graphene of a Co–Si solid solution and silicide CoSi coated by the surface Co_3Si phase. It is shown that the thickness and the composition of the formed silicide films can be changed by varying the amount of the intercalated material and the order of their depositions.

Ion irradiation and defect formation in single layer graphene

Carbon ◽  
2009 ◽  
Vol 47 (14) ◽  
pp. 3201-3207 ◽  
Author(s):  
Giuseppe Compagnini ◽  
Filippo Giannazzo ◽  
Sushant Sonde ◽  
Vito Raineri ◽  
Emanuele Rimini
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

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