scholarly journals Free-carrier relaxation and lattice heating in photoexcited bismuth

2013 ◽  
Vol 87 (7) ◽  
Author(s):  
Y. M. Sheu ◽  
Y. J. Chien ◽  
C. Uher ◽  
S. Fahy ◽  
D. A. Reis
Keyword(s):  
Free Carrier ◽  
Carrier Relaxation ◽  
Lattice Heating

Carrier Relaxation and Lattice Heating Dynamics in Silicon Revealed by Femtosecond Electron Diffraction†

2006 ◽  
Vol 110 (50) ◽  
pp. 25308-25313 ◽  
Author(s):  
Maher Harb ◽  
Ralph Ernstorfer ◽  
Thibault Dartigalongue ◽  
Christoph T. Hebeisen ◽  
Robert E. Jordan ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Carrier Relaxation ◽  
Lattice Heating ◽  
Femtosecond Electron Diffraction

Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Masanobu Miyao ◽  
Teruaki Motooka ◽  
Nobuyoshi Natsuaki ◽  
Takashi Tokuyama
Keyword(s):  
Optical Properties ◽  
Carrier Concentration ◽  
Laser Annealing ◽  
Electronic States ◽  
Free Carrier ◽  
High Dose ◽  
Carrier Relaxation ◽  
Carrier Effective Mass ◽  
Heavily Doped ◽  
Infrared Optical Properties

ABSTRACTElectronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

Free-carrier relaxation dynamics in the normal state of sinteredYBa2Cu3O7−y

1987 ◽  
Vol 36 (4) ◽  
pp. 2357-2360 ◽  
Author(s):  
P. E. Sulewski ◽  
T. W. Noh ◽  
J. T. McWhirter ◽  
A. J. Sievers ◽  
S. E. Russek ◽  
...  
Keyword(s):  
Normal State ◽  
Free Carrier ◽  
Relaxation Dynamics ◽  
Carrier Relaxation ◽  
Carrier Relaxation Dynamics

Pulse-Duration-Dependent-Free-Carrier-Absorption in Semiconductors

1984 ◽  
Vol 35 ◽  
Author(s):  
P. Mukherjee ◽  
M. Sheik-Bahaei ◽  
H.S. Kwok
Keyword(s):  
Relaxation Time ◽  
Laser Pulse ◽  
Pulse Duration ◽  
Present Experiment ◽  
Relaxation Times ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Relaxation ◽  
Energy Relaxation Time ◽  
Carrier Absorption

ABSTRACTThe free carrier absorption in InSb was found to depend on the pulse duration of the picosecond CO2 laser pulse. This is interpreted as the effect of incomplete carrier relaxation within the laser pulse duration. An electron energy relaxation time of 5.6 ps was derived from the observation. The present experiment presents a new method of measuring relaxation times in semiconductors and metals.

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

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