Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation

2012 ◽  
Vol 86 (24) ◽  
Author(s):  
J. Dahl ◽  
M. Kuzmin ◽  
J. Adell ◽  
T. Balasubramanian ◽  
P. Laukkanen
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Band Maximum ◽  
Surface Fermi Level

CATION ANTISITE DEFECTS AND ANTISITE-BASED-DEFECT COMPLEXES IN GaAs

1990 ◽  
Vol 04 (18) ◽  
pp. 1133-1136
Author(s):  
S.B. ZHANG
Keyword(s):  
Structural Change ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Recent Theory ◽  
Band Maximum ◽  
Defect Complexes ◽  
Atomic Exchange ◽  
Antisite Defects

Recent theory predicted that the Ga and B antisites in GaAs are bistable. As the Fermi level is lowered towards the valence-band maximum, a structural change from fourfold to threefold coordination will occur. The Ga antisite will undergo an atomic exchange in the presence of an As interstitial.

Photoemission Study of the α-Sn/Cdte(110) Interface Growth

1987 ◽  
Vol 94 ◽  
Author(s):  
Ming Tang ◽  
David W. Niles ◽  
Isaac Hernández-Calderón ◽  
Hartmut Hóchst
Keyword(s):  
Synchrotron Radiation ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Photoemission Spectroscopy ◽  
Mbe Growth ◽  
Band Maximum ◽  
Interface Growth ◽  
Interfacial Growth ◽  
Photoemission Study

ABSTRACTAngular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.

Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System

1992 ◽  
Vol 259 ◽  
Author(s):  
A. Hughes ◽  
T-H. Shen ◽  
C.C. Matthai
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Density Of States ◽  
Surface State ◽  
Tight Binding ◽  
Valence Band Maximum ◽  
Electronic Density ◽  
Band Maximum ◽  
Electronic Density Of States ◽  
Tight Binding Method

ABSTRACTThe electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.

Controlled synthesis of lithium doped tin dioxide nanoparticles by a polymeric precursor method and analysis of the resulting defect structure

2018 ◽  
Vol 6 (15) ◽  
pp. 6299-6308 ◽  
Author(s):  
Félix del Prado ◽  
Ana Cremades ◽  
David Maestre ◽  
Julio Ramírez-Castellanos ◽  
José M. González-Calbet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Defect Structure ◽  
Tin Dioxide ◽  
Valence Band Maximum ◽  
Controlled Synthesis ◽  
Polymeric Precursor Method ◽  
Polymeric Precursor ◽  
Precursor Method ◽  
Band Maximum

Shift of the Fermi level towards the valence band maximum (VBM) of around Φ ∼ 0.2 eV.

scholarly journals An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shun-Chang Liu ◽  
Chen-Min Dai ◽  
Yimeng Min ◽  
Yi Hou ◽  
Andrew H. Proppe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Surface Passivation ◽  
Defect Density ◽  
Perovskite Solar Cells ◽  
Valence Band Maximum ◽  
Ambient Conditions ◽  
Band Maximum ◽  
Point Tracking ◽  
Power Point

AbstractIn lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.

scholarly journals Synthesis of ZnO doped high valence S element and study of photogenerated charges properties

RSC Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 4422-4427 ◽  
Author(s):  
Lijing Zhang ◽  
Xiufang Zhu ◽  
Zhihui Wang ◽  
Shan Yun ◽  
Tan Guo ◽  
...  
Keyword(s):  
Uniform Distribution ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Band Maximum

The uniform distribution of S dopants elevated the valence band maximum by mixing S 3p with the upper valence band states of ZnO. The valence band maxima of S–ZnO was 0.37 eV higher than that of ZnO.

STM studies of Fermi-level pinning on the GaAs(001) surface

1993 ◽  
Vol 344 (1673) ◽  
pp. 533-543 ◽  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Surface Defects ◽  
Defect Density ◽  
Valence Band Maximum ◽  
Intrinsic Defect ◽  
Fermi Level Pinning ◽  
Donor States ◽  
P Type ◽  
Surface Donor

This paper reviews recent scanning tunnelling microsopy (STM) studies of Fermi-level pinning on the surface of both n- and p-type GaAs(001). The samples are all grown by molecular beam epitaxy and have a (2 x 4)/c(2 x 8) surface reconstruction. The STM has shown that on the surface of highly doped n-type GaAs(001) there is a high density of kinks in the dimer-vacancy rows of the (2 x 4) reconstruction. These kinks are found to be surface acceptors with approximately one electron per kink. The kinks form in exactly the required number to pin the Fermi-level of n-type GaAs(001) at an acceptor level close to mid gap, irrespective of doping level. The Fermi-level position is confirmed with tunnelling spectroscopy. No similar surface donor states are found on p-type GaAs(001). In this case Fermi-level pinning results from ‘intrinsic’ surface defects such as step edges. Since this intrinsic defect density is independent of doping, at high doping levels the Fermi-level on p-type GaAs(001) moves down in the band gap towards the valence band. Tunnelling spectroscopy on p-type GaAs(001) doped 10 19 cm -3 with Be shows the Fermi-level to be 150 mV above the valence band maximum

Valence-band maximum in the layered semiconductor WSe2: Application of constant-energy contour mapping by photoemission

1996 ◽  
Vol 53 (24) ◽  
pp. R16152-R16155 ◽  
Author(s):  
Th. Straub ◽  
K. Fauth ◽  
Th. Finteis ◽  
M. Hengsberger ◽  
R. Claessen ◽  
...  
Keyword(s):  
Valence Band ◽  
Valence Band Maximum ◽  
Layered Semiconductor ◽  
Constant Energy ◽  
Band Maximum ◽  
Contour Mapping ◽  
Energy Contour
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