Controlled synthesis of lithium doped tin dioxide nanoparticles by a polymeric precursor method and analysis of the resulting defect structure

2018 ◽  
Vol 6 (15) ◽  
pp. 6299-6308 ◽  
Author(s):  
Félix del Prado ◽  
Ana Cremades ◽  
David Maestre ◽  
Julio Ramírez-Castellanos ◽  
José M. González-Calbet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Defect Structure ◽  
Tin Dioxide ◽  
Valence Band Maximum ◽  
Controlled Synthesis ◽  
Polymeric Precursor Method ◽  
Polymeric Precursor ◽  
Precursor Method ◽  
Band Maximum

Shift of the Fermi level towards the valence band maximum (VBM) of around Φ ∼ 0.2 eV.

CATION ANTISITE DEFECTS AND ANTISITE-BASED-DEFECT COMPLEXES IN GaAs

1990 ◽  
Vol 04 (18) ◽  
pp. 1133-1136
Author(s):  
S.B. ZHANG
Keyword(s):  
Structural Change ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Recent Theory ◽  
Band Maximum ◽  
Defect Complexes ◽  
Atomic Exchange ◽  
Antisite Defects

Recent theory predicted that the Ga and B antisites in GaAs are bistable. As the Fermi level is lowered towards the valence-band maximum, a structural change from fourfold to threefold coordination will occur. The Ga antisite will undergo an atomic exchange in the presence of an As interstitial.

Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation

2012 ◽  
Vol 86 (24) ◽  
Author(s):  
J. Dahl ◽  
M. Kuzmin ◽  
J. Adell ◽  
T. Balasubramanian ◽  
P. Laukkanen
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Band Maximum ◽  
Surface Fermi Level

Photoemission Study of the α-Sn/Cdte(110) Interface Growth

1987 ◽  
Vol 94 ◽  
Author(s):  
Ming Tang ◽  
David W. Niles ◽  
Isaac Hernández-Calderón ◽  
Hartmut Hóchst
Keyword(s):  
Synchrotron Radiation ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Photoemission Spectroscopy ◽  
Mbe Growth ◽  
Band Maximum ◽  
Interface Growth ◽  
Interfacial Growth ◽  
Photoemission Study

ABSTRACTAngular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.

Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System

1992 ◽  
Vol 259 ◽  
Author(s):  
A. Hughes ◽  
T-H. Shen ◽  
C.C. Matthai
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Density Of States ◽  
Surface State ◽  
Tight Binding ◽  
Valence Band Maximum ◽  
Electronic Density ◽  
Band Maximum ◽  
Electronic Density Of States ◽  
Tight Binding Method

ABSTRACTThe electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.

scholarly journals An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shun-Chang Liu ◽  
Chen-Min Dai ◽  
Yimeng Min ◽  
Yi Hou ◽  
Andrew H. Proppe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Surface Passivation ◽  
Defect Density ◽  
Perovskite Solar Cells ◽  
Valence Band Maximum ◽  
Ambient Conditions ◽  
Band Maximum ◽  
Point Tracking ◽  
Power Point

AbstractIn lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.

Synthesis of Bi4Ge3O12 ceramic scintillators by the polymeric precursor method

2009 ◽  
Vol 100 (2) ◽  
pp. 537-541 ◽  
Author(s):  
Fabiane Alexsandra Andrade de Jesus ◽  
Ronaldo Santos da Silva ◽  
Zélia Soares Macedo
Keyword(s):  
Polymeric Precursor Method ◽  
Polymeric Precursor ◽  
Precursor Method

Yellow ZnxNi1−xWO4 pigments obtained using a polymeric precursor method

2008 ◽  
Vol 77 (1) ◽  
pp. 210-216 ◽  
Author(s):  
A DEOLIVEIRA ◽  
J FERREIRA ◽  
M SILVA ◽  
G BRAGA ◽  
L SOLEDADE ◽  
...  
Keyword(s):  
Polymeric Precursor Method ◽  
Polymeric Precursor ◽  
Precursor Method
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