scholarly journals Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

2012 ◽  
Vol 86 (11) ◽  
Author(s):  
P. Klenovský ◽  
M. Brehm ◽  
V. Křápek ◽  
E. Lausecker ◽  
D. Munzar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excitation Intensity ◽  
Photoluminescence Spectra ◽  
Intensity Dependence ◽  
Si Substrates

Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dots

1998 ◽  
Vol 42 (7-8) ◽  
pp. 1335-1339 ◽  
Author(s):  
J Motohisa ◽  
J.J Baumberg ◽  
A.P Heberle ◽  
J Allam
Keyword(s):  
Quantum Dots ◽  
Excitation Intensity ◽  
Intensity Dependence ◽  
Self Assembled

Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells

2002 ◽  
Vol 41 (Part 1, No. 4A) ◽  
pp. 2082-2083 ◽  
Author(s):  
Sho Shirakata ◽  
Masahiko Kondow ◽  
Takeshi Kitatani
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Photoluminescence Spectra ◽  
Single Quantum ◽  
Intensity Dependence

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Exciton-Related Raman Scattering, Interband Absorption and Photoluminescence in Colloidal Cdse/Cds Core/Shell Quantum Dots Ensemble

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1274
Author(s):  
Grigor A. Mantashian ◽  
Paytsar A. Mantashyan ◽  
Hayk A. Sarkisyan ◽  
Eduard M. Kazaryan ◽  
Gabriel Bester ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Cross Section ◽  
Core Shell ◽  
Interband Absorption ◽  
Photoluminescence Spectra ◽  
Cds Quantum Dots ◽  
Mass Approximation ◽  
Numerical Discretization ◽  
Size Dispersion

By using the numerical discretization method within the effective-mass approximation, we have theoretically investigated the exciton-related Raman scattering, interband absorption and photoluminescence in colloidal CdSe/CdS core/shell quantum dots ensemble. The interband optical absorption and photoluminescence spectra have been revealed for CdSe/CdS quantum dots, taking into account the size dispersion of the ensemble. Numerical calculation of the differential cross section has been presented for the exciton-related Stokes–Raman scattering in CdSe/CdS quantum dots ensemble with different mean sizes.

scholarly journals Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso
Keyword(s):  
Quantum Dots ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Assembled

Temperature dependence of photoluminescence spectra of self-organized CdSe quantum dots

2000 ◽  
Vol 214-215 ◽  
pp. 770-773 ◽  
Author(s):  
Yasuhiro Murase ◽  
Takeshi Ota ◽  
Nobuhiro Yasui ◽  
Akihiro Shikimi ◽  
Tsuguki Noma ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Cdse Quantum Dots ◽  
Photoluminescence Spectra ◽  
Self Organized

Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices

1991 ◽  
Vol 240 ◽  
Author(s):  
A. G. Choo ◽  
H. E. Jackson ◽  
P. Chen ◽  
A. J. Steckl ◽  
V. Gupta ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Peak Position ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Power Dependence ◽  
Photoluminescence Spectra ◽  
Multiple Scan ◽  
Donor Acceptor ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence spectra have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted superlattices. The excitation dependence of the single scan FIB is found to be significantly different from CIB and multiple scan FIB implantations which are similar. The peak position of the donor-acceptor transition is observed to change to higher energies significantly slower with excitation intensity for the single scan FIB case when compared to the multiple scan FIB and CIB cases. Simple models to describe these effects are briefly discussed.

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