Excitation Intensity Dependence of Power-Law Blinking Statistics in Nanocrystal Quantum Dots

2009 ◽  
Vol 113 (47) ◽  
pp. 20161-20168 ◽  
Author(s):  
Kenichi Goushi ◽  
Toshiki Yamada ◽  
Akira Otomo
1998 ◽  
Vol 42 (7-8) ◽  
pp. 1335-1339 ◽  
Author(s):  
J Motohisa ◽  
J.J Baumberg ◽  
A.P Heberle ◽  
J Allam

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.


2010 ◽  
Vol 22 (21) ◽  
pp. 5973-5982 ◽  
Author(s):  
Jacqueline T. Siy ◽  
Michael H. Bartl

2007 ◽  
Vol 111 (28) ◽  
pp. 10336-10341 ◽  
Author(s):  
Viki Kloper ◽  
Ruth Osovsky ◽  
Joanna Kolny-Olesiak ◽  
Aldona Sashchiuk ◽  
Efrat Lifshitz

Small ◽  
2015 ◽  
Vol 11 (38) ◽  
pp. 5176-5176 ◽  
Author(s):  
Feng Wang ◽  
Niladri S. Karan ◽  
Hue Minh Nguyen ◽  
Benjamin D. Mangum ◽  
Yagnaseni Ghosh ◽  
...  

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