scholarly journals Phase diagram of graphene nanoribbons and band-gap bifurcation of Dirac fermions under quantum confinement

2012 ◽  
Vol 85 (19) ◽  
Author(s):  
Y. Y. Sun ◽  
W. Y. Ruan ◽  
Xingfa Gao ◽  
Junhyeok Bang ◽  
Yong-Hyun Kim ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Band Gap ◽  
Quantum Confinement ◽  
Graphene Nanoribbons ◽  
Dirac Fermions

Current Status of Graphene Transistors

2009 ◽  
Vol 156-158 ◽  
pp. 499-509 ◽  
Author(s):  
M.C. Lemme
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbons ◽  
Cmos Technology ◽  
Current Status ◽  
Energy Band Gap ◽  
Layer Graphene ◽  
Silicon Cmos

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Novel switching mechanisms in graphene transistors are briefly introduced that could lead to future memory devices. Finally, graphene FETs are shown to be of interest for analog radio frequency applications.

scholarly journals Morphological characterization and electronic properties of pristine and oxygen-exposed graphene nanoribbons on Ag(110)

2021 ◽  
Author(s):  
Jose Eduardo Barcelon ◽  
Marco Smerieri ◽  
Giovanni Carraro ◽  
Pawel Wojciechowski ◽  
Luca Vattuone ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Quantum Confinement ◽  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Morphological Characterization

Graphene nanoribbons (GNRs) are at the frontier of research on graphene materials since the 1D quantum confinement of electrons allows for the opening of an energy gap.

2D Self-assembly and Electronic Characterization of Oxygen-Boron-Oxygen-Doped Chiral Graphene Nanoribbons

2021 ◽  
Author(s):  
Lei Jin ◽  
Nerea Bilbao ◽  
Yang Lv ◽  
Xiao-Ye Wang ◽  
Soltani Paniz ◽  
...  
Keyword(s):  
Edge Effects ◽  
Self Assembly ◽  
Quantum Confinement ◽  
Graphene Nanoribbons ◽  
One Dimensional ◽  
The Past ◽  
Different Types

Graphene nanoribbons (GNRs), quasi-one-dimensional strips of graphene, exhibit a nonzero bandgap due to quantum confinement and edge effects. In the past decade, different types of GNRs with atomically precise structures...

Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2nanowires

2011 ◽  
Vol 83 (24) ◽  
Author(s):  
O. Demichel ◽  
V. Calvo ◽  
P. Noé ◽  
B. Salem ◽  
P.-F. Fazzini ◽  
...  
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Band Gap Energy ◽  
Core Shell ◽  
Confinement Effects ◽  
Gap Energy ◽  
Quantum Confinement Effects

Size Effect in Germanium Nanostructures Fabricated by Pulsed Laser Deposition

1999 ◽  
Vol 581 ◽  
Author(s):  
K.M. Hassan ◽  
A.K. Sharma ◽  
J. Narayan ◽  
J.F. Muth ◽  
C.W. Teng ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Quantum Confinement ◽  
Three Dimensional ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Island Growth ◽  
Wide Band Gap ◽  
Average Size

ABSTRACTWe have fabricated Ge nanostructures buried in AlN and Al2O3 matrices grown on Si(111) and sapphire substrates by pulsed laser deposition. Our approach involved three-dimensional island growth of low band-gap material followed by a layer of wide band-gap material. The nanodots were uniformly distributed in between alternating layers of AlN or Al2O3. It was observed that these nanodots exhibit crystalline structure when grown at 300-500 °C. The average size of Ge islands was determined to be ∼5-15 nm, which could be varied by controlling laser deposition and substrate parameters. The Raman spectrum showed a peak of the Ge-Ge vibrational mode downward shifted upto 295 cm− which is caused by quantum confinement of phonons in the Ge-dots. The photoluminescence of the Ge dots (size ∼15nm) was blue shifted by ∼0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ∼1.0 eV. The spectral positions of both E1 and E2 transitions in the absorption spectra at room temperature and 77K shift toward higher energy as the Ge dot size decreases. The interpretation of these behaviors in terms of quantum confinement is discussed in this work, and the importance of pulsed laser deposition in fabricating novel nanostructures is emphasized

scholarly journals Augmented band gap tunability in indium-doped zinc sulfide nanocrystals

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3154-3163 ◽  
Author(s):  
Enrico Della Gaspera ◽  
Joseph Griggs ◽  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Edwin L. H. Mayes ◽  
...  
Keyword(s):  
Band Gap ◽  
Zinc Sulfide ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Indium Doping ◽  
Zns Nanocrystals ◽  
Sulfide Nanocrystals

Indium doping in ZnS nanocrystals heavily affects the band gap beyond quantum confinement effect with unprecedented tunability in the UVA/UVB range.

Density Functional Theory Study on Energy Band Gap of Armchair Silicene Nanoribbons with Periodic Nanoholes

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1613-1618 ◽  
Author(s):  
Sadegh Mehdi Aghaei ◽  
Irene Calizo
Keyword(s):  
Density Functional Theory ◽  
Band Gap ◽  
Energy Band ◽  
Quantum Confinement ◽  
Density Functional ◽  
Quantum Confinement Effect ◽  
Density Functional Theory Study ◽  
Energy Band Gap ◽  
Functional Theory ◽  
Silicene Nanoribbons

ABSTRACTIn this study, density functional theory (DFT) is employed to investigate the electronic properties of armchair silicene nanoribbons perforated with periodic nanoholes (ASiNRPNHs). The dangling bonds of armchair silicene nanoribbons (ASiNR) are passivated by mono- (:H) or di-hydrogen (:2H) atoms. Our results show that the ASiNRs can be categorized into three groups based on their width: W = 3P − 1, 3P, and 3P + 1, P is an integer. The band gap value order changes from “EG (3P − 1) < EG (3P) < EG (3P + 1)” to “EG (3P + 1) < EG (3P − 1) < EG (3P)” when edge hydrogenation varies from mono- to di-hydrogenated. The energy band gap values for ASiNRPNHs depend on the nanoribbons width and the repeat periodicity of the nanoholes. The band gap value of ASiNRPNHs is larger than that of pristine ASiNRs when repeat periodicity is even, while it is smaller than that of pristine ASiNRs when repeat periodicity is odd. In general, the value of energy band gap for ASiNRPNHs:2H is larger than that of ASiNRPNHs:H. So a band gap as large as 0.92 eV is achievable with ASiNRPNHs of width 12 and repeat periodicity of 2. Furthermore, creating periodic nanoholes near the edge of the nanoribbons cause a larger band gap due to a strong quantum confinement effect.

scholarly journals Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films

2012 ◽  
Vol 100 (21) ◽  
pp. 211910 ◽  
Author(s):  
Panagiotis Poulopoulos ◽  
Björn Lewitz ◽  
Andreas Straub ◽  
Spiridon D. Pappas ◽  
Sotirios A. Droulias ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Quantum Confinement ◽  
Magnetic Semiconductor ◽  
Band Gap Tuning
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