Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

2012 ◽  
Vol 85 (3) ◽  
Author(s):  
Won Seok Yun ◽  
S. W. Han ◽  
Soon Cheol Hong ◽  
In Gee Kim ◽  
J. D. Lee
2020 ◽  
Vol 59 (12) ◽  
pp. 8543-8551 ◽  
Author(s):  
Alexey S. Shkvarin ◽  
Yury M. Yarmoshenko ◽  
Alexander I. Merentsov ◽  
Elena G. Shkvarina ◽  
Andrei F. Gubkin ◽  
...  

2015 ◽  
Vol 44 (9) ◽  
pp. 2643-2663 ◽  
Author(s):  
Gui-Bin Liu ◽  
Di Xiao ◽  
Yugui Yao ◽  
Xiaodong Xu ◽  
Wang Yao

Two-dimensional group-VIB transition metal dichalcogenides have extraordinary properties originating from their complex electronic structures.


Author(s):  
Rémi Favre ◽  
P. Raybaud ◽  
Tangui Le Bahers

To tackle the challenge of the CO2 photoreduction, semiconducting layered transition metal dichalcogenides like MoS2 have attracted much attention due to their tunable 2D nano-structures. By using advanced periodic density...


Sign in / Sign up

Export Citation Format

Share Document