scholarly journals Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Chengwang Niu ◽  
Baibiao Huang
2020 ◽  
Vol 59 (12) ◽  
pp. 8543-8551 ◽  
Author(s):  
Alexey S. Shkvarin ◽  
Yury M. Yarmoshenko ◽  
Alexander I. Merentsov ◽  
Elena G. Shkvarina ◽  
Andrei F. Gubkin ◽  
...  

2021 ◽  
Vol 7 (13) ◽  
pp. eabd7921
Author(s):  
Yoon Seok Kim ◽  
Sojung Kang ◽  
Jae-Pil So ◽  
Jong Chan Kim ◽  
Kangwon Kim ◽  
...  

Quantum wells (QWs), enabling effective exciton confinement and strong light-matter interaction, form an essential building block for quantum optoelectronics. For two-dimensional (2D) semiconductors, however, constructing the QWs is still challenging because suitable materials and fabrication techniques are lacking for bandgap engineering and indirect bandgap transitions occur at the multilayer. Here, we demonstrate an unexplored approach to fabricate atomic–layer–confined multiple QWs (MQWs) via monolithic bandgap engineering of transition metal dichalcogenides and van der Waals stacking. The WOX/WSe2 hetero-bilayer formed by monolithic oxidation of the WSe2 bilayer exhibited the type I band alignment, facilitating as a building block for MQWs. A superlinear enhancement of photoluminescence with increasing the number of QWs was achieved. Furthermore, quantum-confined radiative recombination in MQWs was verified by a large exciton binding energy of 193 meV and a short exciton lifetime of 170 ps. This work paves the way toward monolithic integration of band-engineered heterostructures for 2D quantum optoelectronics.


2015 ◽  
Vol 44 (9) ◽  
pp. 2643-2663 ◽  
Author(s):  
Gui-Bin Liu ◽  
Di Xiao ◽  
Yugui Yao ◽  
Xiaodong Xu ◽  
Wang Yao

Two-dimensional group-VIB transition metal dichalcogenides have extraordinary properties originating from their complex electronic structures.


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