Influence of insulating layer thickness and interface structure on the electronic structure and magnetic properties of Ni3Fe∕Al2O3∕Ni3Fe magnetic tunnel junction

2005 ◽  
Vol 98 (3) ◽  
pp. 034504
Author(s):  
Yuan Zhou ◽  
Xiaofang Bi
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Layer Thickness ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Interface Structure ◽  
Insulating Layer

Study of Electronic Structure In Ni3Fe/Al2O3/Ni3Fe Magnetic Tunnel Junction with Various Ferromagnetic Layer Thicknesses

2005 ◽  
Vol 475-479 ◽  
pp. 3909-3914
Author(s):  
Yuan Zhou ◽  
Xiao Fang Bi ◽  
Jia Xiang Shang ◽  
Hui Bin Xu
Keyword(s):  
Electronic Structure ◽  
Layer Thickness ◽  
Spin Polarization ◽  
Tunnel Junction ◽  
Great Influence ◽  
Ferromagnetic Layer ◽  
Magnetic Tunnel Junction ◽  
Local Spin Density Approximation ◽  
Insulating Layer ◽  
Maximum Value

A series models of Ni3Fe/Al2O3/Ni3Fe magnetic tunnel junction with Al-terminated interfaces have been established for investigating the influence of ferromagnetic layer thickness on the electronic structure, employing first-principle methods based on local spin-density approximation theory. The spin polarization of the interfacial Ni3Fe monolayer shows a maximum value as the thickness of ferromagnetic layer increases. The Al monolayers at the ferromagnetic/insulating interface and the O monolayer in the interior of insulating layer are also studied in terms of the change of spin polarization with the ferromagnetic layer thickness. In addition, we have found that the structure of Ni3Fe monolayer has a great influence on the spin polarization.

Temperature dependence of magnetic properties on switching energy in magnetic tunnel junction devices with tilted magnetization

2019 ◽  
Vol 472 ◽  
pp. 36-39 ◽  
Author(s):  
B. Teso ◽  
S. Kravenkit ◽  
K. Sorn-in ◽  
A. Kaewrawang ◽  
A. Kruesubthaworn ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Temperature Dependence ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Switching Energy

Effect of MgO Barrier Thickness with Tilted Magnetization on Temperature Increase in Magnetic Tunnel Junction Devices during Current-Induced Magnetization Switching

2015 ◽  
Vol 781 ◽  
pp. 172-175
Author(s):  
Chayada Surawanitkun
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Barrier Thickness ◽  
Magnetization Switching ◽  
Magnetization Direction ◽  
Initial Magnetization ◽  
Temperature Increment

Recently, there has been a growing interest in the thermal stability in magnetic tunnel junction (MTJ) devices with an aspect of the temperature increment during current-induced magnetization switching (CIMS) process. In this work, the temperature increment is explored with factors of the tile of the initial magnetization direction in free layer, θ0, and the MgO layer thickness for different pulse durations, tp. The results show that the highest temperature in MTJ nanopillar is significant at the θ0 of1°-5° and the pulse duration tp < 0.4 ns. Moreover, the temperature results with decreasing the MgO layer thickness are not considerable difference at θ0 of1°-5° for the same tp.

Sign in / Sign up

Export Citation Format

Share Document