Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction

S. Colis; G. Gieres; L. Bär; J. Wecker

doi:10.1063/1.1597964

Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction

Applied Physics Letters ◽

10.1063/1.1597964 ◽

2003 ◽

Vol 83 (5) ◽

pp. 948-950 ◽

Cited By ~ 31

Author(s):

S. Colis ◽

G. Gieres ◽

L. Bär ◽

J. Wecker

Keyword(s):

Bias Voltage ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Double Barrier ◽

Tunnel Magnetoresistance ◽

Versus Bias ◽

Dependence Versus ◽

Versus Bias Voltage

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Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junction with amorphous Co-Fe-B electrodes

The European Physical Journal B ◽

10.1140/epjb/e2006-00291-9 ◽

2006 ◽

Vol 52 (2) ◽

pp. 205-208 ◽

Cited By ~ 1

Author(s):

Z. M. Zeng ◽

Y. Wang ◽

X. F. Han ◽

W. S. Zhan ◽

Z. Zhang

Keyword(s):

Temperature Dependence ◽

Bias Voltage ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Electric Properties ◽

Double Barrier

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Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

AIP Advances ◽

10.1063/5.0002536 ◽

2020 ◽

Vol 10 (8) ◽

pp. 085115

Author(s):

Ryota Suzuki ◽

Yuriko Tadano ◽

Masaaki Tanaka ◽

Shinobu Ohya

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Double Barrier ◽

Tunnel Magnetoresistance ◽

Large Tunnel

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Retraction: “Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction”

Applied Physics Express ◽

10.1143/apex.4.019201 ◽

2010 ◽

Vol 4 (1) ◽

pp. 019201 ◽

Cited By ~ 3

Author(s):

Hiroshi Naganuma ◽

Lixian Jiang ◽

Mikihiko Oogane ◽

Yasuo Ando

Keyword(s):

Tunnel Junction ◽

Room Temperature ◽

Magnetic Tunnel Junction ◽

Double Barrier ◽

Tunnel Magnetoresistance ◽

Large Tunnel

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Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction

Applied Physics Express ◽

10.1143/apex.2.083002 ◽

2009 ◽

Vol 2 ◽

pp. 083002 ◽

Cited By ~ 58

Author(s):

Lixian Jiang ◽

Hiroshi Naganuma ◽

Mikihiko Oogane ◽

Yasuo Ando

Keyword(s):

Tunnel Junction ◽

Room Temperature ◽

Magnetic Tunnel Junction ◽

Double Barrier ◽

Tunnel Magnetoresistance ◽

Large Tunnel

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Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

Applied Physics Letters ◽

10.1063/1.1867559 ◽

2005 ◽

Vol 86 (8) ◽

pp. 082501 ◽

Cited By ~ 41

Author(s):

T. Nozaki ◽

A. Hirohata ◽

N. Tezuka ◽

S. Sugimoto ◽

K. Inomata

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Double Barrier ◽

Tunnel Magnetoresistance

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Epitaxial Growth and Tunnel Magnetoresistance of As-deposited Co2FeAl0.5Si0.5-based Magnetic Tunnel Junction on Ta/Ru Buffer Layer

Journal of the Korean Physical Society ◽

10.3938/jkps.57.160 ◽

2010 ◽

Vol 57 (1) ◽

pp. 160-163 ◽

Cited By ~ 1

Author(s):

Jae Youn Hwang ◽

Gae Hun Lee ◽

Yunheub Song ◽

Hae In Yim

Keyword(s):

Epitaxial Growth ◽

Buffer Layer ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Tunnel Magnetoresistance

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High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

IEEE Transactions on Magnetics ◽

10.1109/tmag.2017.2707079 ◽

2017 ◽

Vol 53 (11) ◽

pp. 1-4 ◽

Cited By ~ 2

Author(s):

Jiaqi Zhou ◽

Weisheng Zhao ◽

Shouzhong Peng ◽

Junfeng Qiao ◽

Jacques-Olivier Klein ◽

...

Keyword(s):

Tunnel Junction ◽

First Principles ◽

Magnetic Tunnel Junction ◽

High Tunnel ◽

Tunnel Magnetoresistance ◽

First Principles Study

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Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction With Enhanced Thermal Stability Recording Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2906932 ◽

2019 ◽

Vol 66 (5) ◽

pp. 2431-2436 ◽

Cited By ~ 9

Author(s):

Guanda Wang ◽

Yue Zhang ◽

Jinkai Wang ◽

Zhizhong Zhang ◽

Kun Zhang ◽

...

Keyword(s):

Thermal Stability ◽

Magnetic Anisotropy ◽

Tunnel Junction ◽

Perpendicular Magnetic Anisotropy ◽

Magnetic Tunnel Junction ◽

Compact Modeling ◽

Double Barrier

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Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5144850 ◽

2020 ◽

Vol 38 (3) ◽

pp. 033801

Author(s):

Masaaki Niwa ◽

Hiroaki Honjo ◽

Loku Singgappulige Rosantha Kumara ◽

Hirofumi Inoue ◽

Shoji Ikeda ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

X Ray Diffraction ◽

Tunnel Magnetoresistance ◽

X Ray ◽

Magnetoresistance Ratio

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Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction

IEEE Transactions on Magnetics ◽

10.1109/tmag.2009.2018586 ◽

2009 ◽

Vol 45 (6) ◽

pp. 2396-2398 ◽

Cited By ~ 2

Author(s):

J.Y. Hwang ◽

S.Y. Lee ◽

N.I. Lee ◽

H.I. Yim ◽

M.Y. Kim ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Interface Roughness ◽

Double Barrier ◽

Magnetization Switching

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