scholarly journals Electric breakdown effect in the current-voltage characteristics of amorphous indium oxide thin films near the superconductor-insulator transition

2011 ◽  
Vol 84 (10) ◽  
Author(s):  
O. Cohen ◽  
M. Ovadia ◽  
D. Shahar
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Insulator Transition ◽  
Electric Breakdown ◽  
Oxide Thin Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Superconductor Insulator Transition

Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

2016 ◽  
Vol 35 (9) ◽  
pp. 949-954
Author(s):  
N. Kalkan
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Optical Transmission ◽  
Oxide Thin Films ◽  
Film Properties ◽  
Indium Concentration ◽  
Ag Electrodes ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Substrate Temperatures

AbstractCurrent–voltage characteristics of indium-embedded indium oxide thin films (600–850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I–V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

scholarly journals Advanced processes for low-temperature formation of functional metal oxide based thin films

2021 ◽  
Vol 2056 (1) ◽  
pp. 012046
Author(s):  
A Abduev ◽  
A Akhmedov ◽  
A Asvarov ◽  
V Kanevsky ◽  
A Muslimov ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Metal Oxide ◽  
Transparent Conductive Oxide ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Magnetron Deposition ◽  
Current Voltage ◽  
Plasma Target ◽  
Current Voltage Characteristics

Abstract The analysis the discharge processes in magnetron plasma, target sputtering processes, as well as nucleation and formation of oxide thin films during dc magnetron sputtering is carried out. Particular attention is paid to the phenomenon of instabilities of the current-voltage characteristics of magnetron plasma during the sputtering of oxide targets, the processes of structural transformations of the surface of metal oxide targets under ion bombardment impact, and the mechanisms of low-temperature magnetron deposition of metal oxide thin films. Based on the results of the analysis performed the optimal routes for improving technologies for the low-temperature formation of transparent conductive oxide thin films have been discussed.

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

2021 ◽  
Author(s):  
Dagyum Yoo ◽  
Seong Ho Han ◽  
Sung Kwang Lee ◽  
Taeyong Eom ◽  
Bo Keun Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Oxide Thin Films ◽  
Indium Complexes

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

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