Persistent light-induced change in the effective band gap and reversible control over the effective band gap in bulk semiconductor crystals

2011 ◽  
Vol 83 (24) ◽  
Author(s):  
Sharon Shwartz ◽  
K. V. Adarsh ◽  
Mordechai Segev ◽  
Evgeny Lakin ◽  
Emil Zolotoyabko ◽  
...  
Keyword(s):  
Band Gap ◽  
Semiconductor Crystals ◽  
Bulk Semiconductor

scholarly journals The Current Carriers’ Dispersion Law of a Crystal, Their Chemical Potential and a Set of Important Properties of Crystals

2020 ◽  
Vol 21 (2) ◽  
pp. 284-287
Author(s):  
Ya. S. Budzhak ◽  
T. Wacławski
Keyword(s):  
Small Parameter ◽  
Band Gap ◽  
Chemical Potential ◽  
Band Width ◽  
Semiconductor Crystals ◽  
Dispersion Law ◽  
Parabolic Dispersion

In this paper, a new non-parabolic dispersion law has been established, which for a small parameter of the spectrum nonparabolicity coincides with the known Kane’s nonparabolic dispersion law. The Kane’s dispersion law works well when the well-known parameter of nonparabolicity is much less than 1, and the new law works well enough when the parameter of nonparabolicity is less than 1. In addition, this law shows that crystals with a band gap (i.e., forbidden band width) Eg~10-1 eV – these are semiconductor crystals, crystals with Eg~10-2 eV – these are metals.

On the high growth rates in electroepitaxial growth of bulk semiconductor crystals in magnetic field

2005 ◽  
Vol 275 (1-2) ◽  
pp. e1-e6 ◽  
Author(s):  
Sadik Dost ◽  
Hamdi Sheibani ◽  
Yongcai Liu ◽  
Brian Lent
Keyword(s):  
Magnetic Field ◽  
Growth Rates ◽  
High Growth ◽  
Semiconductor Crystals ◽  
Bulk Semiconductor

Dynamical thermal conductivity of bulk semiconductor crystals

2012 ◽  
Vol 112 (8) ◽  
pp. 083515 ◽  
Author(s):  
Younès Ezzahri ◽  
Karl Joulain
Keyword(s):  
Thermal Conductivity ◽  
Semiconductor Crystals ◽  
Bulk Semiconductor

Molecular Limit of a Bulk Semiconductor:  Size Dependence of the “Band Gap” in CdSe Cluster Molecules

2000 ◽  
Vol 122 (11) ◽  
pp. 2673-2674 ◽  
Author(s):  
V. N. Soloviev ◽  
A. Eichhöfer ◽  
D. Fenske ◽  
U. Banin
Keyword(s):  
Band Gap ◽  
Size Dependence ◽  
Bulk Semiconductor

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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