Theory of the motion at the band crossing points in bulk semiconductor crystals and in inversion layers

2009 ◽  
Vol 105 (5) ◽  
pp. 053702 ◽  
Author(s):  
David Esseni ◽  
Pierpaolo Palestri
Keyword(s):  
Semiconductor Crystals ◽  
Band Crossing ◽  
Bulk Semiconductor

Persistent light-induced change in the effective band gap and reversible control over the effective band gap in bulk semiconductor crystals

2011 ◽  
Vol 83 (24) ◽  
Author(s):  
Sharon Shwartz ◽  
K. V. Adarsh ◽  
Mordechai Segev ◽  
Evgeny Lakin ◽  
Emil Zolotoyabko ◽  
...  
Keyword(s):  
Band Gap ◽  
Semiconductor Crystals ◽  
Bulk Semiconductor

On the high growth rates in electroepitaxial growth of bulk semiconductor crystals in magnetic field

2005 ◽  
Vol 275 (1-2) ◽  
pp. e1-e6 ◽  
Author(s):  
Sadik Dost ◽  
Hamdi Sheibani ◽  
Yongcai Liu ◽  
Brian Lent
Keyword(s):  
Magnetic Field ◽  
Growth Rates ◽  
High Growth ◽  
Semiconductor Crystals ◽  
Bulk Semiconductor

Dynamical thermal conductivity of bulk semiconductor crystals

2012 ◽  
Vol 112 (8) ◽  
pp. 083515 ◽  
Author(s):  
Younès Ezzahri ◽  
Karl Joulain
Keyword(s):  
Thermal Conductivity ◽  
Semiconductor Crystals ◽  
Bulk Semiconductor

Charged dislocations in semiconductor crystals

1995 ◽  
Vol 165 (8) ◽  
pp. 887 ◽  
Author(s):  
V.B. Shikin ◽  
Yu.V. Shikina
Keyword(s):  
Semiconductor Crystals

scholarly journals Effect of Deformation on Topological Properties of Cobalt Monosilicide

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 143
Author(s):  
Sergey Nikolaev ◽  
Dmitry Pshenay-Severin ◽  
Yuri Ivanov ◽  
Alexander Burkov
Keyword(s):  
Band Structure ◽  
Ab Initio Calculations ◽  
Topological Charge ◽  
External Stress ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Topological Properties ◽  
Uniaxial Deformation ◽  
Band Crossing ◽  
Topological Charges

Recently, it was shown that materials with certain crystal structures can exhibit multifold band crossings with large topological charges. CoSi is one such material that belongs to non-centrosymmetric space group P213 (#198) and posseses multifold band crossing points with a topological charge of 4. The change of crystal symmetry, e.g., by means of external stress, can lift the degeneracy and change its topological properties. In the present work, the influence of uniaxial deformation on the band structure and topological properties of CoSi is investigated on the base of ab initio calculations. The k·p Hamiltonian taking into account deformation is constructed on the base of symmetry consideration near the Γ and R points both with and without spin-orbit coupling. The transformation of multifold band crossings into nodes of other types with different topological charges, their shift both in energy and in reciprocal space and the tilt of dispersion around nodes are studied in detail depending on the direction of uniaxial deformation.

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