Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications

2005 ◽  
Vol 98 (9) ◽  
pp. 094501 ◽  
Author(s):  
A. J. Ptak ◽  
D. J. Friedman ◽  
Sarah Kurtz ◽  
R. C. Reedy
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Current ◽  
Acceptor Concentration

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

2011 ◽  
Vol 323 (1) ◽  
pp. 504-507 ◽  
Author(s):  
A. Kawaharazuka ◽  
K. Onomitsu ◽  
J. Nishinaga ◽  
Y. Horikoshi
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

2013 ◽  
Vol 103 (3) ◽  
pp. 032102 ◽  
Author(s):  
Stéphane Brochen ◽  
Julien Brault ◽  
Sébastien Chenot ◽  
Amélie Dussaigne ◽  
Mathieu Leroux ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ionization Energy ◽  
Molecular Beam ◽  
Acceptor Concentration ◽  
P Type

scholarly journals Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]

2013 ◽  
Vol 103 (26) ◽  
pp. 269904 ◽  
Author(s):  
Stéphane Brochen ◽  
Julien Brault ◽  
Sébastien Chenot ◽  
Amélie Dussaigne ◽  
Mathieu Leroux ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ionization Energy ◽  
Molecular Beam ◽  
Acceptor Concentration ◽  
P Type

High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1556-L1558 ◽  
Author(s):  
Yoshitaka Okada ◽  
Shigeru Ohta ◽  
Hirofumi Shimomura ◽  
Akio Kawabata ◽  
Mitsuo Kawabe
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Films
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