scholarly journals Thermally activated energy and flux-flow Hall effect ofFe1+y(Te1+xSx)z

2010 ◽  
Vol 82 (13) ◽  
Author(s):  
Hechang Lei ◽  
Rongwei Hu ◽  
E. S. Choi ◽  
C. Petrovic
Keyword(s):  
Hall Effect ◽  
Flux Flow ◽  
Thermally Activated

ANISOTROPIC VORTEX DYNAMICS AND PHASE DIAGRAM OF YBa2Cu3O7 SINGLE CRYSTALS WITH CANTED COLUMNAR DEFECTS

1996 ◽  
Vol 10 (22) ◽  
pp. 2723-2743 ◽  
Author(s):  
D. S. REED ◽  
N.-C. YEH ◽  
W. JIANG ◽  
U. KRIPLANI ◽  
M. KONCZYKOWSKI ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Magnetic Fields ◽  
Vortex Dynamics ◽  
Flow Model ◽  
Flux Flow ◽  
Thermally Activated ◽  
Liquid Transition ◽  
Columnar Defects ◽  
Thermally Activated Flux Flow ◽  
Activated Flux

The anisotropic vortex dynamics and phase diagram are determined for a YBa 2 Cu 3 O 7 single crystal with columnar defects oriented at ±7.5° relative to the crystalline c-axis. A second-order splayed-glass to vortex-liquid transition is manifested for magnetic fields nearly parallel to the columns via the critical scaling of vortex AC and DC transport properties. In contrast, for magnetic fields aligned close to the ab-plane, an XY-like vortex-glass transition prevails. For magnetic fields at intermediate angles, there is no evidence of any vortex phase transition, and the vortex dynamics is described in terms of the thermally activated flux flow model.

MAGNETORESISTANCE IN Bi1.8Pb0.4Sr2Ca2Cu3Oy THICK FILM

1994 ◽  
Vol 08 (26) ◽  
pp. 1661-1665
Author(s):  
WANG ZHIHE ◽  
HAN HANMIN ◽  
HAN GUCHANG ◽  
WANG SHUNXI
Keyword(s):  
Magnetic Field ◽  
Thick Film ◽  
Applied Magnetic Field ◽  
Flow Region ◽  
Irreversibility Line ◽  
Flow Process ◽  
Flux Flow ◽  
Thermally Activated ◽  
Thermally Activated Flux Flow ◽  
Activated Flux

The magnetoresistance curves of Bi(2223) thick film were measured near T c with applied magnetic field parallel and perpendicular to the c axis ranging up to 0.12 T. The results show that thermally activated flux flow region does not exist very close to T c and magnetoresistive transition can be well described by a thermally activated flux flow process below 108.5 K and at lower magnetic field. The relation between applied magnetic field H and temperature T was found to fit with “irreversibility line.”

scholarly journals Upper critical field and thermally activated flux flow in LaFeAsO1−xFx

2011 ◽  
Vol 109 (7) ◽  
pp. 07E162 ◽  
Author(s):  
M. Shahbazi ◽  
X. L. Wang ◽  
C. Shekhar ◽  
O. N. Srivastava ◽  
Z. W. Lin ◽  
...  
Keyword(s):  
Critical Field ◽  
Upper Critical Field ◽  
Flux Flow ◽  
Thermally Activated ◽  
Thermally Activated Flux Flow ◽  
Activated Flux

Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

1997 ◽  
Vol 468 ◽  
Author(s):  
W. Götz ◽  
M. D. McCluskey ◽  
N. M. Johnson ◽  
D. P. Bour ◽  
E. E. Haller
Keyword(s):  
Hall Effect ◽  
Absorption Spectra ◽  
Thermal Activation ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Thermally Activated ◽  
Local Vibrational Mode ◽  
Hall Effect Measurements ◽  
Spectroscopic Identification ◽  
Mg Doped

ABSTRACTMg-doped GaN films grown by metalorganic chemical vapor deposition were characterized by variable-temperature Hall-effect measurements and Fourier-transform infrared absorption spectroscopy. As-grown, thermally activated, and deuterated Mg-doped GaN samples were investigated. The existence of Mg-H complexes in GaN is demonstrated with the observation of a local vibrational mode (LVM) at 3125 cm-1 (8 K). At 300 K this absorption line shifts to 3122 cm-1. The intensity of the LVM line is strongest in absorption spectra of as-grown GaN. Mg which is semi-insulating. Upon thermal activation, the intensity of the LVM line significantly decreases and an acceptor concentration of 2×1019cm-3 is derived from the Hall-effect data. After deuteration at 600°C the resistivity of the Mg-doped GaN increased by four orders of magnitude. A LVM line at 2321 cm-1 (8 K) appears in the absorption spectra which is consistent with the isotopie shift of the vibrational frequency when D is substituted for H.

Thermally activated flux-flow in epitaxially grown YBa2(Cu1−χZnχ)3O7− thin films

1991 ◽  
Vol 185-189 ◽  
pp. 2175-2176 ◽  
Author(s):  
C. Tomé-Rosa ◽  
G. Jakob ◽  
M. Paulson ◽  
P. Wagner ◽  
A. Walkenhorst ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Flow ◽  
Thermally Activated ◽  
Thermally Activated Flux Flow ◽  
Activated Flux

Anomalies in Free Flux-Flow Hall Effect

1994 ◽  
Vol 73 (12) ◽  
pp. 1699-1702 ◽  
Author(s):  
S. Bhattacharya ◽  
M. J. Higgins ◽  
T. V. Ramakrishnan
Keyword(s):  
Hall Effect ◽  
Flux Flow
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