Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond

2010 ◽  
Vol 81 (4) ◽  
Author(s):  
K. Tsugawa ◽  
H. Noda ◽  
K. Hirose ◽  
H. Kawarada
1995 ◽  
Vol 416 ◽  
Author(s):  
P. K. Baumann ◽  
R. J. Nemanich

ABSTRACTIn this study copper and cobalt films have been deposited on natural type IIb single crystal semiconducting diamond (100) surfaces in ultra-high vacuum (UHV). Prior to metal deposition the diamond crystals have been cleaned by a 1150°C anneal in UHV. This treatment resulted in positive electron affinity surfaces. Upon deposition of 2Å of Cu or Co a negative electron affinity (NEA) was observed. Schottky barrier heights of 0.70 eV and 0.35 eV were found for Cu and Co respectively. In-situ Auger electron spectroscopy (AES) was employed to confirm the presence of a metal layer.


1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman

2005 ◽  
Vol 86 (6) ◽  
pp. 062108 ◽  
Author(s):  
Q. T. Zhao ◽  
U. Breuer ◽  
E. Rije ◽  
St. Lenk ◽  
S. Mantl

1986 ◽  
Vol 4 (3) ◽  
pp. 855-859 ◽  
Author(s):  
M. Liehr ◽  
P. E. Schmid ◽  
F. K. LeGoues ◽  
P. S. Ho

Sign in / Sign up

Export Citation Format

Share Document