scholarly journals Electron emission from conduction band of diamond with negative electron affinity

2009 ◽  
Vol 80 (16) ◽  
Author(s):  
H. Yamaguchi ◽  
T. Masuzawa ◽  
S. Nozue ◽  
Y. Kudo ◽  
I. Saito ◽  
...  
Keyword(s):  
Conduction Band ◽  
Electron Affinity ◽  
Electron Emission ◽  
Negative Electron Affinity

Exciton-derived Electron Emission from (001) Diamondp–nJunction Diodes with Negative Electron Affinity

2008 ◽  
Vol 1 (1) ◽  
pp. 015004 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Toshiharu Makino ◽  
Sung-Gi Ri ◽  
Norio Tokuda ◽  
Hiromitsu Kato ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Negative Electron Affinity

Characterization of Secondary Electron Emission from Materials with Low or Negative Electron Affinity

1998 ◽  
Vol 509 ◽  
Author(s):  
J.E. Yater ◽  
A. Shih
Keyword(s):  
Energy Distribution ◽  
Surface Properties ◽  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Surface Composition ◽  
Secondary Electron Emission ◽  
Emission Characteristics ◽  
Negative Electron Affinity ◽  
Diamond Surfaces

AbstractSecondary electron emission spectroscopy is used to examine the emission characteristics of diamond films as a function of the bulk and surface properties. We find significant variation in the secondary electron yields measured from diamond surfaces even when energy distribution measurements indicate that a low or negative electron affinity is present. In particular, we observe that the material properties, such as bulk and surface uniformity, surface composition, and impurity and defect concentrations, have a strong affect on the secondary electron yield measurements. Furthermore, the energy distribution of the emitted electrons is found to vary with adsorbate species. In certain cases, the energy distribution changes with adsorbate coverage even though the measured electron intensity remains unchanged. From an analysis of the data, we identify bulk and surface properties needed to optimize the emission characteristics.

Investigation of electron emission site of p–i–n diode-type emitters with negative electron affinity

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FP07
Author(s):  
Daisuke Takeuchi ◽  
Satoshi Koizumi ◽  
Toshiharu Makino ◽  
Hiromitsu Kato ◽  
Hideyo Okushi ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Negative Electron Affinity

Interpretation of secondary electron contrast from negative electron affinity diamond surfaces

1995 ◽  
Vol 53 ◽  
pp. 120-121
Author(s):  
D.P. Malta ◽  
J.B. Posthill ◽  
T.P. Humphreys ◽  
R.J. Markunas
Keyword(s):  
Conduction Band ◽  
Electron Affinity ◽  
Secondary Electron ◽  
Metal Layer ◽  
Wide Band ◽  
Diamond Surface ◽  
Semiconductor Surface ◽  
Negative Electron Affinity ◽  
Diamond Surfaces ◽  
Electron Emitters

Diamond is a wide band-gap semiconductor with many unique physical properties that make it an attractive technological material. One such property is the negative electron affinity (NEA) behavior of the surface when properly terminated with hydrogen or a thin metal layer. The NEA diamond surface exhibits an unusually large secondary electron (SE) yield which is desirable for applications in cold cathode electron emitters of flat panel displays. Examination of NEA diamond surfaces by scanning electron microscopy (SEM) has indicated that a unique mechanism appears to be responsible for the SE contrast in which sub-surface microstructural information is contained. This paper provides a brief interpretation of the origin of SE contrast from the NEA diamond surface.The electron affinity of a semiconductor surface, χ, is defined by the position of the vacuum energy level, E0, relative to the conduction band minimum, Ec (Fig. la). If χ>0, excited conduction band electrons must migrate to the surface and arrive with sufficient kinetic energy to overcome the surface energy barrier in order to escape into vacuum.

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