scholarly journals Experimental study of the interfacial cobalt oxide inCo3O4/α−Al2O3(0001)epitaxial films

2009 ◽  
Vol 80 (15) ◽  
Author(s):  
C. A. F. Vaz ◽  
D. Prabhakaran ◽  
E. I. Altman ◽  
V. E. Henrich
Keyword(s):  
Experimental Study ◽  
Cobalt Oxide ◽  
Epitaxial Films ◽  
Α Al2o3

Highly thermal stable transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0001) by MOCVD

2008 ◽  
Vol 254 (20) ◽  
pp. 6601-6604 ◽  
Author(s):  
Xianjin Feng ◽  
Jin Ma ◽  
Fan Yang ◽  
Feng Ji ◽  
Fujian Zong ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Transparent Conducting ◽  
Α Al2o3 ◽  
Thermal Stable

Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075502 ◽  
Author(s):  
Andrei M. Smirnov ◽  
Arina V. Kremleva ◽  
Shukrillo Sh. Sharofidinov ◽  
Vladislav E. Bougrov ◽  
Alexey E. Romanov
Keyword(s):  
Strain State ◽  
Epitaxial Films ◽  
Stress Strain ◽  
Stress Strain State ◽  
Α Al2o3

High electrical conductivity of layered cobalt oxide Ca3Co4O9 epitaxial films grown by topotactic ion-exchange method

2006 ◽  
Vol 89 (3) ◽  
pp. 032111 ◽  
Author(s):  
Kenji Sugiura ◽  
Hiromichi Ohta ◽  
Kenji Nomura ◽  
Masahiro Hirano ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Ion Exchange ◽  
Cobalt Oxide ◽  
Epitaxial Films ◽  
High Electrical Conductivity ◽  
Exchange Method ◽  
Ion Exchange Method

scholarly journals A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

2018 ◽  
Vol 57 (1) ◽  
pp. 82-96 ◽  
Author(s):  
S.A. Kukushkin ◽  
A.V. Osipov ◽  
A.V. Redkov ◽  
A.S. Grashchenko ◽  
N.A. Feoktistov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Film ◽  
Experimental Studies ◽  
Epitaxial Films ◽  
New Method ◽  
Epitaxial Silicon ◽  
Synthesis Conditions ◽  
Current State ◽  
Α Al2o3 ◽  
Composite Heat

Abstract A fundamentally new method for synthesis of thick (200-400 nm) epitaxial films of silicon carbide on single-crystal Al2O3 substrates is proposed. The method develops the previously discovered method of topochemical substitution of atoms during the transformation of Si into SiC. In the proposed method, a layer of epitaxial Si of orientation (100) or (111) is being preliminarily deposited on the sapphire via CVD or other technique. Then, using a topochemical reaction between the CO gas and the deposited epitaxial silicon film, a part of Si atoms is being substituted by carbon atoms. As a result, the silicon film transforms into SiC film. As experimental studies have shown, in the process of this transformation a high-quality epitaxial SiC layer can be formed on the sapphire surface under certain synthesis conditions. A detailed investigation of grown SiC layers using the methods of electron diffraction, ellipsometry, Raman spectroscopy, X-ray diffractometry and scanning microscopy is conducted and an analysis of experimental data is given. Formation of both cubic 3C-SiC and hexagonal SiC polytypes during the transformation of Si into SiC was revealed by the XRD method. A detailed analysis of the current state of the problems of growth of epitaxial SiC layers on Al2O3 using various methods is provided. The method developed in this study opens up completely new perspectives not only for synthesis of semiconductors, but also for creation of new classes of composite, heat-resistant and other solid coatings.

An hydrothermal experimental study of the cobalt–cobalt oxide redox buffer

2008 ◽  
Vol 252 (3-4) ◽  
pp. 136-144 ◽  
Author(s):  
K LEMKE ◽  
R ROSENBAUER ◽  
J BISCHOFF ◽  
D BIRD
Keyword(s):  
Experimental Study ◽  
Cobalt Oxide ◽  
Redox Buffer
Sign in / Sign up

Export Citation Format

Share Document