Highly thermal stable transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0001) by MOCVD

2008 ◽  
Vol 254 (20) ◽  
pp. 6601-6604 ◽  
Author(s):  
Xianjin Feng ◽  
Jin Ma ◽  
Fan Yang ◽  
Feng Ji ◽  
Fujian Zong ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Transparent Conducting ◽  
Α Al2o3 ◽  
Thermal Stable

Transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0001) by MOCVD

2008 ◽  
Vol 62 (12-13) ◽  
pp. 1779-1781 ◽  
Author(s):  
Xianjin Feng ◽  
Jin Ma ◽  
Fan Yang ◽  
Feng Ji ◽  
Fujian Zong ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Transparent Conducting ◽  
Α Al2o3

Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0001) by MOCVD

2009 ◽  
Vol 255 (11) ◽  
pp. 6024-6027 ◽  
Author(s):  
Fan Yang ◽  
Jin Ma ◽  
Caina Luan ◽  
Lingyi Kong
Keyword(s):  
Transparent Conducting ◽  
Α Al2o3

scholarly journals Experimental study of the interfacial cobalt oxide inCo3O4/α−Al2O3(0001)epitaxial films

2009 ◽  
Vol 80 (15) ◽  
Author(s):  
C. A. F. Vaz ◽  
D. Prabhakaran ◽  
E. I. Altman ◽  
V. E. Henrich
Keyword(s):  
Experimental Study ◽  
Cobalt Oxide ◽  
Epitaxial Films ◽  
Α Al2o3

Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075502 ◽  
Author(s):  
Andrei M. Smirnov ◽  
Arina V. Kremleva ◽  
Shukrillo Sh. Sharofidinov ◽  
Vladislav E. Bougrov ◽  
Alexey E. Romanov
Keyword(s):  
Strain State ◽  
Epitaxial Films ◽  
Stress Strain ◽  
Stress Strain State ◽  
Α Al2o3

scholarly journals A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

2018 ◽  
Vol 57 (1) ◽  
pp. 82-96 ◽  
Author(s):  
S.A. Kukushkin ◽  
A.V. Osipov ◽  
A.V. Redkov ◽  
A.S. Grashchenko ◽  
N.A. Feoktistov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Film ◽  
Experimental Studies ◽  
Epitaxial Films ◽  
New Method ◽  
Epitaxial Silicon ◽  
Synthesis Conditions ◽  
Current State ◽  
Α Al2o3 ◽  
Composite Heat

Abstract A fundamentally new method for synthesis of thick (200-400 nm) epitaxial films of silicon carbide on single-crystal Al2O3 substrates is proposed. The method develops the previously discovered method of topochemical substitution of atoms during the transformation of Si into SiC. In the proposed method, a layer of epitaxial Si of orientation (100) or (111) is being preliminarily deposited on the sapphire via CVD or other technique. Then, using a topochemical reaction between the CO gas and the deposited epitaxial silicon film, a part of Si atoms is being substituted by carbon atoms. As a result, the silicon film transforms into SiC film. As experimental studies have shown, in the process of this transformation a high-quality epitaxial SiC layer can be formed on the sapphire surface under certain synthesis conditions. A detailed investigation of grown SiC layers using the methods of electron diffraction, ellipsometry, Raman spectroscopy, X-ray diffractometry and scanning microscopy is conducted and an analysis of experimental data is given. Formation of both cubic 3C-SiC and hexagonal SiC polytypes during the transformation of Si into SiC was revealed by the XRD method. A detailed analysis of the current state of the problems of growth of epitaxial SiC layers on Al2O3 using various methods is provided. The method developed in this study opens up completely new perspectives not only for synthesis of semiconductors, but also for creation of new classes of composite, heat-resistant and other solid coatings.

Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films

2010 ◽  
Vol 518 (11) ◽  
pp. 3097-3100 ◽  
Author(s):  
Yoshiharu Kakehi ◽  
Kazuo Satoh ◽  
Takeshi Yoshimura ◽  
Atsushi Ashida ◽  
Norifumi Fujimura
Keyword(s):  
Carrier Concentration ◽  
Epitaxial Films ◽  
Transparent Conducting ◽  
P Type

Reply to “Comment on ‘Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates’” [Appl. Phys. Express 13, 075502 (2020)]

2020 ◽  
Vol 13 (8) ◽  
pp. 089102 ◽  
Author(s):  
Andrei M. Smirnov ◽  
Arina V. Kremleva ◽  
Shukrillo Sh. Sharofidinov ◽  
Vladislav E. Bougrov ◽  
Alexey E. Romanov
Keyword(s):  
Strain State ◽  
Epitaxial Films ◽  
Stress Strain ◽  
Stress Strain State ◽  
Α Al2o3
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